Tailoring quantum wells in AlGaInP laser diodes for superior optical performance

被引：0

作者：

Anum ^{[1
]}

Usman, Muhammad ^{[1
]}

Habib, Usman ^{[1
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Khyber Pakhtunk, Pakistan

来源：

PHYSICA SCRIPTA | 2025年 / 100卷 / 03期

关键词：

AlGaInP; optical gain; stimulated emission; QW grading; threshold current; red; laser diode; HETEROSTRUCTURE; OPERATION; POWER;

D O I：

10.1088/1402-4896/adb226

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This work employed composition-graded quantum wells (QWs) to increase the performance of red laser diodes (LDs) based on Aluminum gallium indium phosphide (AlGaInP). Two LDs, one with conventional QWs and other with composition-graded QWs, were studied numerically. The findings showed that the LD with composition-graded QWs significantly improved the device performance such as enhanced carrier concentration in the active region, decreased carrier leakage, improved carrier injection efficiency, and a higher rate of stimulated recombination rate. According to the results of the simulation, grading the QWs enhanced the slope efficiency to 0.80 W A-1 and successfully reduced the threshold current to 300 mA. This enhanced performance, compared to conventional LDs, demonstrates the promising impact of our employed composition grading.

引用

页数：7

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