Formation and stability of Ge nanocrystals in polymorph converted Ga2O3: Temperature-driven journey

被引：0

作者：

Garcia-Fernandez, J. ^{[1
,2
]}

Kjeldby, S. B. ^{[1
,2
]}

Zeng, L. J. ^{[3
]}

Olsson, E. ^{[3
]}

Vines, L. ^{[1
,2
]}

Prytz, O. ^{[1
,2
]}

机构：

[1] Univ Oslo, Dept Phys, N-0315 Oslo, Norway

[2] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0315 Oslo, Norway

[3] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2025年 / 126卷 / 05期

基金：

瑞典研究理事会;

关键词：

DOPED BETA-GA2O3 LAYERS; ION-IMPLANTATION; GALLIUM OXIDE; STRUCTURAL-PROPERTIES; GROWTH; SI; GAMMA-GA2O3; NUCLEATION;

D O I：

10.1063/5.0235371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of germanium (Ge) implantation on beta-Ga2O3 followed by ex situ annealing through polymorph conversion in air at various temperatures (600-1100 degrees C) is studied. Atomic resolution aberration-corrected scanning transmission electron microscopy is employed to examine the structural and microstructural changes induced by the annealing process. The results show that the thermal annealing process leads to the formation of Ge nanocrystals, which subsequently disappear, leaving nano-voids inside the Ge-doped Ga2O3 matrix. In addition, the microstructure displays distinct crystallographic relationships in annealed beta-Ga2O3 forming layers with well-defined interfaces. This work reveals the unique effects of Ge-implantation, demonstrating the possible functionalization of Ga2O3 with Ge nanocrystals.

引用

页数：7

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