Different built-in electric fields for transmission-mode GaAs photocathodes through doping engineering: Design and modeling

被引:0
作者
Tong, Zehao [1 ]
Zhang, Yijun [1 ]
Jiang, Yu [1 ]
Li, Shiman [1 ]
Gao, Jianpo [1 ]
Shi, Feng [2 ]
Cheng, Hongchang [2 ]
Guo, Xin [2 ]
Qian, Yunsheng [1 ]
Zeng, Yugang [3 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Peoples R China
[2] Sci & Technol Low Light Level Night Vis Lab, Xian 710065, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
基金
中国国家自然科学基金;
关键词
GaAs photocathode; Transmission-mode; Doping engineering; Built-in electric field; Quantum efficiency; CARRIER CONCENTRATION; PHOTOEMISSION;
D O I
10.1016/j.physleta.2024.130009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In order to enhance the emission performance of transmission-mode GaAs photocathodes used in optoelectronic field, different exponential doping structures are designed for the GaAs emission layer to generate different types of built-in electric fields. These built-in electric fields include the constant, increasing and decreasing types, which can help photoelectron transport toward the emission surface. By solving the one-dimensional continuity equation using the finite difference method, the electron concentration distribution and quantum efficiency of the three types of exponential doping GaAs photocathodes are derived. Meanwhile, the light absorption distributions in the emission layer are simulated by the finite difference time domain method. By comparing the optical absorption distribution and the electron concentration distribution, it is concluded that, among the three types of exponential doping structures, the exponential doping structure generating the increasing built-in electric field has the most sufficient long-wave light absorption capacity and the strongest photoelectron transport ability, thereby achieving the highest quantum efficiency. This theoretical work can help understand the mechanism of improving the photoemission performance of GaAs photocathodes through doping engineering.
引用
收藏
页数:8
相关论文
共 34 条
  • [1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
    ACKET, GA
    NIJMAN, W
    LAM, HT
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3033 - 3040
  • [2] BROAD-BAND GAAS TRANSMISSION PHOTO-CATHODE
    ANTYPAS, GA
    ESCHER, JS
    EDGECUMBE, J
    ENCK, RS
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4301 - 4301
  • [3] OPTICAL-PROPERTIES OF ALXGA1-XAS
    ASPNES, DE
    KELSO, SM
    LOGAN, RA
    BHAT, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 754 - 767
  • [4] Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode
    Cai, Zhipeng
    Yang, Wenzheng
    Tang, Weidong
    Hou, Xun
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (02) : 238 - 244
  • [5] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
    CASEY, HC
    SELL, DD
    WECHT, KW
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257
  • [6] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
    CASEY, HC
    MILLER, BI
    PINKAS, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1281 - 1287
  • [7] Resolution characteristics of graded band-gap reflection-mode AlGaAs/GaAs photocathodes
    Deng, Wenjuan
    Zhang, Daoli
    Zou, Jijun
    Peng, Xincun
    Wang, Weilu
    Zhang, Yijun
    Chang, Benkang
    [J]. OPTICS COMMUNICATIONS, 2015, 356 : 278 - 281
  • [8] Exploration the p-type doping mechanism of GaAs nanowires from first-principles study
    Diao, Yu
    Liu, Lei
    Xia, Sihao
    [J]. PHYSICS LETTERS A, 2019, 383 (2-3) : 202 - 209
  • [9] Cathode R&D for future light sources
    Dowell, D. H.
    Bazarov, I.
    Dunham, B.
    Harkay, K.
    Hernandez-Garcia, C.
    Legg, R.
    Padmore, H.
    Rao, T.
    Smedley, J.
    Wan, W.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2010, 622 (03) : 685 - 697
  • [10] Effect of multilayer complex buffer layer structures on photoelectric performance of GaAs-based photocathodes
    Feng, Cheng
    Liu, Jian
    Zhang, Yijun
    Qian, Yunsheng
    Zhao, Jing
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2022, 54 (07)