Al2O3-improved CaZr4(PO4)6 composite ceramics for matched to the thermal expansion of silicon wafers

被引:0
|
作者
Ruan, Limei [1 ,2 ]
Li, Yuanxun [1 ,3 ]
Yang, Rui [1 ]
Li, Fuyu [1 ,3 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China
[2] Chengdu Hongke Elect Technol Co Ltd, Chengdu, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
关键词
Al2O3; doping; composite ceramics; coefficients of thermal expansion; Young's modulus; DIELECTRIC-PROPERTIES; FLEXURAL STRENGTH; SUBSTRATE;
D O I
10.1111/ijac.15017
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
During silicon wafer testing, a mismatch between the thermal expansion characteristics of the wafer probe card and the silicon wafer is likely to result in the probe not being able to maintain precise alignment with the various contact points on the wafer. To address this challenge, CaZr4(PO4)(6) + x wt% Al2O3 composite ceramics (CZPA, x = 0-25) are prepared by the solid-phase reaction method. when x = 5, the bulk density achieves the maximum value (3.17 g/cm(3)). Young's modulus reaches a maximum (58 GPa) at x = 5. The x- and y-axis shrinkages are in the range of 5.67%-8.67% and the z-axis shrinkage is in the range of 7.11%-9.91%. The coefficients of thermal expansion (CTE) gradually increase with the increase of Al2O3 doping and achieve a near-Si thermal expansion coefficient at x = 15, which means that it matches the thermal expansion of silicon wafers. This ceramic developed in this work is expected to be applied to multilayer-matched substrates matched to silicon.
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页数:7
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