Sulfurization dependency of WS2 crystal orientation on sapphire in chemical vapor deposition using WO3 powder and H2S gas

被引：0

作者：

Wang, Wei-Lin ^{[1
]}

Chiu, Kun-An ^{[1
]}

Chen, Wei-Chun ^{[1
]}

Chen, Hung-Pin ^{[1
]}

Chen, Hua-Lin ^{[1
]}

Lin, Yu-Wei ^{[1
]}

Chen, Fong-Zhi ^{[1
]}

机构：

[1] Taiwan Instrument Res Inst, Natl Appl Res Labs, Hsinchu, Taiwan

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2025年 / 343卷

关键词：

Tungsten disulfide; In-plane X-ray diffraction; Crystal orientation; Sulfurization; DER-WAALS EPITAXY; THIN-FILMS; TUNGSTEN DISULFIDE; MONOLAYER MOS2; CVD GROWTH; METAL; TRANSITION;

D O I：

10.1016/j.jssc.2024.125116

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The deposition of (0001) WS2 on c-plane (0001) sapphire substrates is implemented using a furnace chemical vapor deposition (CVD) system with WO3 powder and H2S gas precursors. The main carrier gas is Ar in the CVD system. The influence of sulfurization on the crystal orientation of WS2 is investigated by varying the gas flow rates of H2S (1-5 sccm) and Ar (25-125 sccm). In-plane X-ray diffraction patterns reveal the crystal orientation relationships of (0001) WS2 and c-plane sapphire substrates with different H2S and Ar conditions. The predominant orientation relationship of (0001) WS2 on c-plane sapphire is (1120 ) WS 2 // (1120 ) sapphire under the conditions of low sulfurization rate (H2S/Ar:4 %). The predominant orientation relationship converts from (1120 ) WS 2 // (1120 ) sapphire to (1010 ) WS 2 // (1120 ) sapphire with an increase in sulfurization rate. A high sulfurization rate (H2S/Ar:20 %) equally promotes the nucleation and growth of WS2 on the sapphire substrate.

引用

页数：8

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