magnetron sputtering;
radio frequency power;
thin film;
tin (IV) oxide;
TIN OXIDE-FILMS;
OPTICAL-PROPERTIES;
RAMAN-SCATTERING;
TEMPERATURE;
DEPOSITION;
NANOPARTICLES;
EVAPORATION;
NANOBELTS;
SILICON;
SIZE;
D O I:
10.1002/jemt.24759
中图分类号:
R602 [外科病理学、解剖学];
R32 [人体形态学];
学科分类号:
100101 ;
摘要:
SnO2 thin films were deposited on Si substrates by radio frequency (RF) magnetron sputtering technique, and the effects of different sputtering power (60-90 W) on the structural, surface morphological, and electrical properties of the film were investigated with XRD, Raman, AFM, SEM, and fore point probe. The deposited SnO2 film at lower RF was amorphous, while well-defined intense XRD signals at higher RF power indicated significant improvement in crystalline nature. Eg and A1g vibrating modes related to SnO2 were clearly observed in the Raman spectra. With the increasing RF sputtering power, the surface roughness of the films gradually increased while electrical resistivity revealed sharp decrease.
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Bansal, Shikha
Pandya, Dinesh K.
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机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Pandya, Dinesh K.
Kashyap, Subhash C.
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机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Bansal, Shikha
Pandya, Dinesh K.
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h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Pandya, Dinesh K.
Kashyap, Subhash C.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
机构:
Ctr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
Chan y Diaz, E.
Duarte-Moller, A.
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机构:
Ctr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
Duarte-Moller, A.
Camacho, Juan M.
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h-index: 0
机构:
CINVESTAV IPN Merida, Dept Appl Phys, Merida 97310, Yucatan, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
Camacho, Juan M.
Castro-Rodriguez, R.
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h-index: 0
机构:
CINVESTAV IPN Merida, Dept Appl Phys, Merida 97310, Yucatan, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Bansal, Shikha
Pandya, Dinesh K.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Pandya, Dinesh K.
Kashyap, Subhash C.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Bansal, Shikha
Pandya, Dinesh K.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Pandya, Dinesh K.
Kashyap, Subhash C.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
机构:
Ctr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
Chan y Diaz, E.
Duarte-Moller, A.
论文数: 0引用数: 0
h-index: 0
机构:
Ctr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
Duarte-Moller, A.
Camacho, Juan M.
论文数: 0引用数: 0
h-index: 0
机构:
CINVESTAV IPN Merida, Dept Appl Phys, Merida 97310, Yucatan, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico
Camacho, Juan M.
Castro-Rodriguez, R.
论文数: 0引用数: 0
h-index: 0
机构:
CINVESTAV IPN Merida, Dept Appl Phys, Merida 97310, Yucatan, MexicoCtr Invest Mat Avanzados SC, Dept Mat Nanoestruct, Mexico City 31109, Chihuahua, Mexico