Dependence of RF Sputtering Power on Structural and Electrical Properties of SnO2 Thin Films

被引:1
作者
Sajdeh, Natasha [1 ]
Terohid, Seyed Ali Asghar [1 ]
Asgary, Somayeh [2 ]
Pour, Ghobad Behzadi [3 ]
机构
[1] Islamic Azad Univ, Dept Phys, Hamedan Branch, Hamadan, Iran
[2] Islamic Azad Univ, Dept Phys, West Tehran Branch, Tehran, Iran
[3] Islamic Azad Univ, Dept Phys, East Tehran Branch, Tehran, Iran
关键词
magnetron sputtering; radio frequency power; thin film; tin (IV) oxide; TIN OXIDE-FILMS; OPTICAL-PROPERTIES; RAMAN-SCATTERING; TEMPERATURE; DEPOSITION; NANOPARTICLES; EVAPORATION; NANOBELTS; SILICON; SIZE;
D O I
10.1002/jemt.24759
中图分类号
R602 [外科病理学、解剖学]; R32 [人体形态学];
学科分类号
100101 ;
摘要
SnO2 thin films were deposited on Si substrates by radio frequency (RF) magnetron sputtering technique, and the effects of different sputtering power (60-90 W) on the structural, surface morphological, and electrical properties of the film were investigated with XRD, Raman, AFM, SEM, and fore point probe. The deposited SnO2 film at lower RF was amorphous, while well-defined intense XRD signals at higher RF power indicated significant improvement in crystalline nature. Eg and A1g vibrating modes related to SnO2 were clearly observed in the Raman spectra. With the increasing RF sputtering power, the surface roughness of the films gradually increased while electrical resistivity revealed sharp decrease.
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页数:8
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