Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers

被引：0

作者：

Seidel, L. ^{[1
]}

Li, T. ^{[2
]}

Concepcion, O. ^{[2
]}

Spironetti, D. ^{[3
]}

Benkhelifa, A. ^{[1
]}

Kiyek, V ^{[2
]}

Schulze, J. ^{[4
]}

Marzban, B. ^{[5
]}

Capellini, G. ^{[3
,6
]}

Witzens, J. ^{[7
]}

Gruetzmacher, D. ^{[2
]}

Buca, D. ^{[2
]}

Oehme, M. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Semicond Engn, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

[2] Forschungszentrum Julich, Peter Grunberg Inst 9, Wilhelm Johnen Str, D-52428 Julich, Germany

[3] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Germany

[4] Friedrich Alexander Univ Erlangen, Chair Electron Devices, Cauerstr 6, D-91058 Erlangen, Germany

[5] Swiss Fed Inst Technol, Inst Quantum Elektron, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland

[6] Univ Roma Tre, Dept Sci, Viale Guglielmo Marconi 446, I-00154 Rome, Italy

[7] Rhein Westfal TH Aachen, Inst Integrated Photon, Campus Blvd 73, D-52074 Aachen, Germany

来源：

METAMATERIALS, METADEVICES, AND METASYSTEMS 2024 | 2024年 / 13109卷

关键词：

SiGeSn; GeSn; Multi-Quantum-Well; Laser; Microdisk;

D O I：

10.1117/12.3028016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

\This paper reports on SiGeSn/GeSn multi-quantum-well microdisk lasers. The fabrication of the devices includes a selective under-etching step, which enhances the guiding of the whispering gallery modes inside the cavity. Lasing occurs under different electrical pumping conditions with a very low threshold current and for long, quasi-continuous wave pulses compared to previously reported GeSn-based microdisk lasers. Furthermore, the lasing threshold current is reduced by a factor of ten compared to similar double-heterostructure devices.

引用

页数：3

共 7 条

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