Developing fatigue-resistant ferroelectrics using interlayer sliding switching

被引：77

作者：

Bian, Renji ^{[1
,2
]}

He, Ri ^{[3
,4
]}

Pan, Er ^{[1
]}

Li, Zefen ^{[1
]}

Cao, Guiming ^{[5
,6
]}

Meng, Peng ^{[1
]}

Chen, Jiangang ^{[1
]}

Liu, Qing ^{[1
]}

Zhong, Zhicheng ^{[3
,4
,7
,8
]}

Li, Wenwu ^{[9
,10
]}

Liu, Fucai ^{[1
,2
,11
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 611731, Peoples R China

[2] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313001, Peoples R China

[3] Chinese Acad Sci, Key Lab Magnet Mat Devices, Ningbo 315201, Peoples R China

[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techno, Ningbo 315201, Peoples R China

[5] Xi Chang Univ, Sch Informat Sci & Technol, Xi Chang 615013, Peoples R China

[6] Xi Chang Univ, Key Lab Liangshan Agr Digital Transformat Sichuan, Xi Chang 615013, Peoples R China

[7] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

[8] Univ Sci & Technol China, Suzhou Inst Adv Res, Suzhou 215123, Peoples R China

[9] Fudan Univ, Inst Optoelect, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China

[10] Fudan Univ, Dept Mat Sci, State Key Lab Photovolta Sci & Technol, Shanghai 200433, Peoples R China

[11] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China

来源：

SCIENCE | 2024年 / 385卷 / 6704期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; HIGH ENDURANCE; HETEROSTRUCTURES; BILAYER; GATE;

D O I：

10.1126/science.ado1744

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

引用

页码：57 / 62

页数：6

共 71 条

[1] Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors [J].

Bae, Jong-Ho ;

Kwon, Daewoong ;

Jeon, Namho ;

Cheema, Suraj ;

Tan, Ava Jiang ;

Hu, Chenming ;

Salahuddin, Sayeef .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (11) :1637-1640

[2] Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure [J].

Baek, Sungpyo ;

Yoo, Hyun Ho ;

Ju, Jae Hyeok ;

Sriboriboon, Panithan ;

Singh, Prashant ;

Niu, Jingjie ;

Park, Jin-Hong ;

Shin, Changhwan ;

Kim, Yunseok ;

Lee, Sungjoo .

ADVANCED SCIENCE, 2022, 9 (21)

[3] Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery [J].

Chatterjee, Korok ;

Kim, Sangwan ;

Karbasian, Golnaz ;

Tan, Ava J. ;

Yadav, Ajay K. ;

Khan, Asif I. ;

Hu, Chenming ;

Salahuddin, Sayeef .

IEEE ELECTRON DEVICE LETTERS, 2017, 38 (10) :1379-1382

[4] Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O-3 thin films [J].

Chen, MS ;

Wu, TB ;

Wu, JM .

APPLIED PHYSICS LETTERS, 1996, 68 (10) :1430-1432

[5] Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition [J].

Choi, Se-Na ;

Moon, Seung-Eon ;

Yoon, Sung-Min .

NANOTECHNOLOGY, 2021, 32 (08)

[6] Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3 [J].

Choi, T. ;

Lee, S. ;

Choi, Y. J. ;

Kiryukhin, V. ;

Cheong, S. -W. .

SCIENCE, 2009, 324 (5923) :63-66

[7] Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors [J].

Di Bartolomeo, Antonio ;

Grillo, Alessandro ;

Urban, Francesca ;

Iemmo, Laura ;

Giubileo, Filippo ;

Luongo, Giuseppe ;

Amato, Giampiero ;

Croin, Luca ;

Sun, Linfeng ;

Liang, Shi-Jun ;

Ang, Lay Kee .

ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (28)

[8] Edge-Based Two-Dimensional ?-In2Se3-MoS2 Ferroelectric Field Effect Device [J].

Dutta, Debopriya ;

Mukherjee, Subhrajit ;

Uzhansky, Michael ;

Mohapatra, Pranab K. ;

Ismach, Ariel ;

Koren, Elad .

ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (14) :18505-18515

[9] FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].

EOM, CB ;

VANDOVER, RB ;

PHILLIPS, JM ;

WERDER, DJ ;

MARSHALL, JH ;

CHEN, CH ;

CAVA, RJ ;

FLEMING, RM ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572

[10] Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs [J].

Eshete, Yonas Assefa ;

Kang, Kyungrok ;

Kang, Seunghun ;

Kim, Yejin ;

Nguyen, Phuong Lien ;

Cho, Deok-Yong ;

Kim, Yunseok ;

Lee, Jaekwang ;

Cho, Suyeon ;

Yang, Heejun .

ADVANCED MATERIALS, 2022, 34 (31)

← 1 2 3 4 5 6 7 8 →