Polarization-sensitive photoresponse in few-layer ZrSe3 photodetectors

被引:0
|
作者
Ruano, Pedro L. Alcazar [1 ,2 ]
Vaquero, Daniel [3 ]
Viso, Estrella Sanchez [1 ]
Li, Hao [1 ]
Mompean, Federico [1 ]
Dominguez-Adame, Francisco [2 ]
Castellanos-Gomez, Andres [1 ]
Quereda, Jorge [1 ]
机构
[1] Inst Ciencia Mat Madrid ICMM CSIC, 2D Foundry Grp, E-28049 Madrid, Spain
[2] Univ Complutense, Dept Fis Mat, GISC, E-28040 Madrid, Spain
[3] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
来源
2D MATERIALS | 2025年 / 12卷 / 01期
基金
欧洲研究理事会;
关键词
two-dimensional materials; transition metal trichalcogenides; optoelectronics; thin films;
D O I
10.1088/2053-1583/ad9287
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present an in-depth spectral characterization of the fundamental optical and optoelectronic properties of few-layer ZrSe3, a layered semiconductor of the group IV-V transition metal trichalcogenide family known for its in-plane anisotropic structure and quasi-1D electrical and optical characteristics. Our comprehensive analysis, conducted at both room temperature and in cryogenic vacuum, reveals that ZrSe(3 )exhibits pronounced excitonic features in its optical spectra, which are highly sensitive to light polarization. These features are also evident in photocurrent spectra, presenting a strongly dichroic photoresponse with dichroic ratios exceeding 4 for excitation on resonance with the main exciton level. By comparing optical and optoelectronic spectral measurements, we elucidate the contributions of optically generated excitons to photocurrent. This work addresses substantial gaps of information in earlier literature for ZrSe(3 )and advances the understanding of its unique symmetry and optical properties, paving the way for its application in nonlinear optoelectronic devices.
引用
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页数:9
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