Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes

After years of research, silicon carbide (SiC) power devices are being implemented in practical applications. In particular, SiC-based meatal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to be key components of next-generation power modules. Since the properties of MOS structures are crucial to device performance and reliability, achieving a high-quality interface is very important. Nitridation of SiO2/SiC interfaces is widely used in the SiC industry for improving interface properties. Currently, high-temperature annealing in nitric oxide is the most common method, but its effectiveness is quite limited. Moreover, interface nitridation is also essential for advanced vertical-trench MOSFETs with MOS channels formed on non-basal planes. This review presents a comprehensive picture of research on nitrided SiO2/SiC interfaces based on physical and electrical characterizations. Specifically, we focused on the effects and drawbacks of interface nitridation and described a thorough benchmarking of nitrided MOS devices on basal and non-basal planes.