The Effect of Temperature on the Carrier Transport Performance of p-CuO/n-WO3 Self-Powered Photodetectors

被引:0
作者
Han, Chaoqian [1 ,2 ,3 ]
Wang, Liying [1 ,2 ,3 ]
Zhang, Xiaohan [1 ,2 ,3 ]
Yang, Xijia [1 ,2 ,3 ]
Li, Xuesong [1 ,2 ,3 ]
Gao, Yang [1 ,2 ,3 ]
Lu, Wei [1 ,2 ,3 ,4 ]
机构
[1] Changchun Univ Technol, Key Lab Adv Struct Mat, Minist Educ, Changchun 130012, Peoples R China
[2] Changchun Univ Technol, Sch Mat Sci & Engn, Changchun 130012, Peoples R China
[3] Changchun Univ Technol, Adv Inst Mat Sci, Changchun 130012, Peoples R China
[4] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
关键词
WO3; CuO; heterojunction; UV-visible light photodetector; temperature; HETEROJUNCTION; NANOPARTICLES;
D O I
10.1021/acsaelm.4c01787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A UV-visible light self-powered photodetector based on p-CuO/n-WO3 heterojunction structure was prepared by hydrothermal and spin-coating methods. The photoelectrical properties of the detector at room temperature and its electrical properties in the temperature range from room temperature to 200 degrees C were studied. In particular, it shows extremely sensitive response between 400 and 700 nm, with a sensitivity of 449.5 at room temperature, a rise time of 32.6 ms, a fall time of 31.8 ms, and a maximum responsivity of 4.589 mu A/W. Theoretical simulation reveals detailed information about the behavior of electrons and holes, emphasizing the distribution of the electric field in the steady state of the device. Theoretical simulations indicate that the WO3 layer, where the electric field is maximized, serves as the pressure-bearing layer, with breakdown primarily occurring in this region. These findings provide a straightforward manufacturing method for self-powered devices.
引用
收藏
页码:9165 / 9173
页数:9
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