Accurate Modeling of Quantum Transport in Graphene Geometric Diode for THz Rectenna Applications

被引:0
|
作者
Zampa, Gian Marco [1 ]
Mencarelli, Davide [1 ]
Pierantoni, Luca [1 ]
机构
[1] Marche Polytech Univ, Dept Informat Engn, I-60131 Ancona, Italy
关键词
quantum simulations; graphene; geometric diodes; THz rectification;
D O I
10.1109/NANO61778.2024.10628926
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene geometric diodes could provide rectification at terahertz frequencies and present promising application in rectennas design for sensing and energy harvesting. This paper presents a multiphysics model for the simulation of rectennas, coupling quantum mechanics to simulate ballistic transport in the geometric diode and non linear electromagnetic simulation for the antenna rectification. The current-voltage characteristic, computed through a time-dependent Schrodinger equation approach, is then compared with experiments from the literature, providing a good matching. The diode has subsequently been used as a non linear element in the modelling of the rectenna device achieving a rectified voltage in the order of ten mV and a DC power conversion efficiency for different parallel resistive loads of few kiloohms in the range of 0.01%.
引用
收藏
页码:1 / 4
页数:4
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