Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes

被引：0
作者：
Kawano, Makoto [1 ]
Cunha, Carlos [1 ]
Hirama, Kazuyuki [1 ]
Kumakura, Kazuhide [1 ,2 ]
Taniyasu, Yoshitaka [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, 3-1,Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, North 13, West 8, Sapporo, Hokkaido 0600813, Japan
来源：
APPLIED PHYSICS LETTERS | 2025年 / 126卷 / 01期
关键词：
ELECTRICAL SPIN INJECTION; ROOM-TEMPERATURE; VOLTAGE CHARACTERISTICS; TRANSPORT; POLARIZATION; RELAXATION; CONTACTS; TIMES;
D O I：
10.1063/5.0234753
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferromagnetic permalloy/p-type boron (B)-doped diamond Schottky barrier diodes (SBDs) were demonstrated. The SBDs showed a clear rectifying behavior with a high on/off ratio of over 10(9) and an ideality factor close to unity at 300 K. The Schottky barrier height was 2.07 eV at the permalloy/B-doped diamond interface. The permalloy Schottky electrodes did not intermix with B-doped diamond and had almost the same magnetic properties as bulk permalloy.
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页数：5
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共 62 条
  • [1] Electronic measurement and control of spin transport in silicon
    Appelbaum, Ian
    Huang, Biqin
    Monsma, Douwe J.
    [J]. NATURE, 2007, 447 (7142) : 295 - 298
  • [2] Balasubramanian G, 2009, NAT MATER, V8, P383, DOI [10.1038/NMAT2420, 10.1038/nmat2420]
  • [3] POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS
    BALIGA, BJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) : 455 - 457
  • [4] DIELECTRIC CONSTANT OF DIAMOND
    BHAGAVANTAM, S
    RAO, DAASN
    [J]. NATURE, 1948, 161 (4097) : 729 - 729
  • [5] Temperature dependence on current-voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film
    Chen, YG
    Ogura, M
    Okushi, H
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4367 - 4369
  • [6] Coey J. M. D., 2009, Magnetism and Magnetic Materials, P11
  • [7] Electrical creation of spin polarization in silicon at room temperature
    Dash, Saroj P.
    Sharma, Sandeep
    Patel, Ram S.
    de Jong, Michel P.
    Jansen, Ron
    [J]. NATURE, 2009, 462 (7272) : 491 - 494
  • [8] Towards a Room-Temperature Spin Quantum Bus in Diamond via Electron Photoionization, Transport, and Capture
    Doherty, M. W.
    Meriles, C. A.
    Alkauskas, A.
    Fedder, H.
    Sellars, M. J.
    Manson, N. B.
    [J]. PHYSICAL REVIEW X, 2016, 6 (04):
  • [9] THEORY OF THE EFFECT OF SPIN-ORBIT COUPLING ON MAGNETIC RESONANCE IN SOME SEMICONDUCTORS
    ELLIOTT, RJ
    [J]. PHYSICAL REVIEW, 1954, 96 (02): : 266 - 279
  • [10] Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420
    Fert, A
    Jaffrès, H
    [J]. PHYSICAL REVIEW B, 2001, 64 (18)
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