Quantifying the Electrical Impact of Bonding Misalignment for 0.5 μm Pitch Hybrid Bonding Structures

被引：0

作者：

Ryan, Kevin ^{[1
]}

Ip, Nathan ^{[2
]}

Netzband, Christopher ^{[1
]}

Chien, Kun-Chieh ^{[2
]}

Tuchman, Andrew ^{[1
]}

Huang, Jason ^{[1
]}

LeFevre, Scott ^{[1
]}

Son, Ilseok ^{[1
]}

Aizawa, Hirokazu ^{[1
]}

Maekawa, Kaoru ^{[1
]}

机构：

[1] America LLC, TEL Technol Ctr, Albany, NY 12203 USA

[2] Tokyo Electron Amer Inc, Austin, TX USA

来源：

PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年

关键词：

Cu hybrid bonding; contact resistivity; fine pitch; heterogeneous integration; wafer-to-wafer (W2W); face-to-face; 3D advanced packaging;

D O I：

10.1109/ECTC51529.2024.00216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.5 mu m pitch multi-level back-end-of-line (BEOL) test vehicle was developed to evaluate the performance of the wafer-to-wafer (W2W) bonding tool platform. Test structures with intentional pattern misalignment were included to quantify the systematic relationship between the measured electrical resistance and bonding process misalignment. This programmed shift is offset with the local alignment measurements and creates a continuous range of bonding pad contact areas with corresponding variation in the resistance values. This data set can be fit with an analytical model to separate the overall circuit resistance from the contact resistance sensitivity at the bond pad Cu interface.

引用

页码：1329 / 1334

页数：6

共 13 条

[1] Ayoub Bassel, 2022, 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), P418, DOI 10.1109/EPTC56328.2022.10013180
[2] Impact of Process Variations on the Capacitance and Electrical Resistance down to 1.44 μm Hybrid Bonding Interconnects
Ayoub, B.
Lhostis, S.
Moreau, S.
Perez, E. Leon
Jourdon, J.
Lamontagne, P.
Deloffre, E.
Mermoz, S.
de Buttet, C.
Balan, V
Euvard, C.
Exbrayat, Y.
Fremont, H.
[J]. 2020 IEEE 22ND ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2020, : 453 - 458
[3] Mechanism of Edge Bonding Void Formation in Hydrophilic Direct Wafer Bonding
Castex, A.
Broekaart, M.
Rieutord, F.
Landry, K.
Lagahe-Blanchard, C.
[J]. ECS SOLID STATE LETTERS, 2013, 2 (06) : P47 - P50
[4] Huo Z., 2022, 2022 IEEE S VLSI TEC, P254, DOI DOI 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830285
[5] Ip N., 2023, Metrology, Inspection, and Process Control, VXXXVII
[6] Distortion Simulation for Direct Wafer-to-Wafer Bonding Process
Ip, Nathan
Nejadsadeghi, Nima
Kohama, Norifumi
Tanoue, Hayato
Motoda, Kimio
[J]. 2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC, 2023, : 694 - 698
[7] Characterization of fine pitch Hybrid Bonding pads using electrical misalignment test vehicle
Jani, Imed
Lattard, Didier
Vivet, Pascal
Arnaud, Lucile
Cheramy, Severine
Beigne, Edith
Farcy, Alexis
Jourdon, Joris
Henrion, Yann
Deloffre, Emilie
Bilgen, Halim
[J]. 2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 1926 - 1932
[8] Kagawa Y., 2019, 2019 INT 3D SYST INT, P1
[9] Micro-bumping, Hybrid Bonding, or Monolithic? A PPA Study for Heterogeneous 3D IC Options
Kim, Jinwoo
Zhu, Lingjun
Torun, Hakki Mert
Swaminathan, Madhavan
Lim, Sung Kyu
[J]. 2021 58TH ACM/IEEE DESIGN AUTOMATION CONFERENCE (DAC), 2021, : 1189 - 1194
[10] 0.5μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration
Netzband, Christopher
Ryan, Kevin
Mimura, Yuji
Ilseok, Son
Aizawa, Hirokazu
[J]. 2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC, 2023, : 1100 - 1104

← 1 2 →