Short-Circuit Characteristics of Asymmetry Trench (AT) MOSFET and Associative Failure Mechanisms over Wide Ambient Temperature

被引：2

作者：

Ding, Xiaofeng ^{[1
]}

Peng, Lyuzhang ^{[1
]}

Zhao, Yujia ^{[1
]}

Yang, Kun ^{[1
]}

Cui, Huifeng ^{[1
]}

Shan, Zhenyu ^{[1
]}

Yang, Yanyong ^{[1
]}

Lyu, Gang ^{[1
]}

机构：

[1] Beihang Univ, Sch Automat Sci & Elect Engn, Beijing, Peoples R China

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

SiC MOSFET; Asymmetry Trench; Short circuit failure; VOLTAGE;

D O I：

10.1109/ISPSD59661.2024.10579642

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Silicon carbide (SiC) based power semiconductor devices outperform their silicon counterparts in applications facing harsh environments where efficient and reliable operation is required over a wide ambient temperature (T-A) range. This paper presents the short circuit (SC) characteristics of a typical asymmetry trench (AT) SiC MOSFET. SC withstand time (SCWT) and associated failure mechanism of those SiC MOSFETs are systematically evaluated at T-A ranging from 200 to 600 K. It is found that the key factor limiting the SC capability of AT MOSFETs is the thermal-related gate-oxide degradation. Furthermore, the trench corner is considered to be the most vulnerable region leading to the gate leakage current.

引用

页码：216 / 219

页数：4

共 22 条

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