Influence of Preparation Ambient on Luminescent and Electrical Properties of TiO2:Sm Thin Films

被引:0
|
作者
Kaku, Shinichiro [1 ]
Miyano, Kazuto [1 ]
Isshiki, Hideo [2 ]
Zhao, Xinwei [1 ,3 ]
Murayama, Mariko [1 ,4 ]
机构
[1] Tokyo Univ Sci, Dept Phys, Kagurazaka, Tokyo 1628601, Japan
[2] Univ Electrocommun, Dept Engn Sci, Chofu, Tokyo 1828585, Japan
[3] Henan Univ Technol, Henan 450001, Peoples R China
[4] Toyo Univ Res Inst Ind Technol, Kawagoe, Saitama 3508585, Japan
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2024年
关键词
oxide semiconductors; photoluminescence; rare earths; TiO2; X-ray absorption fine structure; DOPED TIO2; OXYGEN VACANCY; ANATASE; SPECTROSCOPY; TRANSITION; ARTEMIS; RUTILE; ATHENA;
D O I
10.1002/pssb.202400545
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This study investigates the effects of different fabrication and annealing atmospheres on the properties of samarium (Sm)-doped titanium dioxide (TiO2:Sm) thin films, with a focus on luminescence and electrical conductivity. TiO2:Sm thin films are deposited by laser ablation and annealed at 700 degrees C in O-2 and H-2 + N-2 atmospheres. X-ray diffraction analysis shows that fabrication and annealing in the H-2 + N-2 atmosphere significantly inhibit crystal growth. PL spectra reveal that films fabricated and annealed in O-2 exhibit the strongest luminescence, while those in the H-2 + N-2 show quenched luminescence. X-ray absorption fine structure results indicate that Sm3+ ions in the non-luminescent samples have a high-symmetry oxygen coordination, which is unfavorable for luminescence. C-V and I-V measurements reveal a substantial increase in electrical conductivity for films fabricated and annealed in H-2 + N-2, attributed to the incorporation of hydrogen and the formation of oxygen vacancies. This study concludes that while the fabrication and annealing in the H-2 + N-2 atmospheres enhance the electrical conductivity of TiO2:Sm thin films, they also degrade luminescence. Balancing luminescence intensity and electrical conductivity is crucial for the optical device application of TiO2:Sm thin films. It is necessary to carefully adjust the fabrication and annealing conditions to enhance electrical conductivity while maintaining strong luminescence.
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页数:5
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