SPOT: Fast and Optimal Built-In Redundancy Analysis Using Smart Potential Case Collection

被引:0
|
作者
Han, Donghyun [1 ]
Kim, Sunghoon [1 ]
Kim, Dayoung [1 ]
Kang, Sungho [1 ]
机构
[1] Yonsei Univ, Dept Elect & Elect Engn, Comp Syst Reliable SOC Lab, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
Maintenance engineering; Redundancy; Memory management; Hardware; Production; Costs; Resource management; Built-in self-test; Very large scale integration; Reliability engineering; Analysis time; built-in redundancy analysis (BIRAs); hardware overhead; memory repair; repair rate; test cost; yield improvement; OPTIMAL REPAIR RATE; MEMORY; SPARE; BIRA; ALLOCATION; SCHEME;
D O I
10.1109/TVLSI.2024.3499955
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
With advancements in manufacturing and design technology, memory integration density has improved. However, as integration density increases, the cost of testing and repairing memory has also risen, posing a significant challenge in memory production. To address this challenge, built-in self-repair (BISR) has been proposed. Traditional built-in redundancy analysis (BIRAs) performs limited analysis of faults during the fault collection process, resulting in a significant delay in generating a repair solution after the test sequence is completed. This inefficiency arises from the time required to repair the memory posttest. This article proposes a new fast and optimal BIRA using smart potential case collection. The proposed BIRA conducts a detailed analysis of detected faults during the test process. Using this novel fault collection results, a potential case is generated. This is a repair case that can repair the memory with a high probability and is generated immediately after the test sequence ends. If the memory cannot be repaired by the potential case, an exhaustive search is conducted for the faults requiring further analysis to generate an optimal repair solution. Compared to previous studies, the proposed BIRA demonstrates extremely low analysis time with an optimal repair rate.
引用
收藏
页码:780 / 792
页数:13
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