Investigation of electric double layer effects at Li3PO4 Li+ solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal

被引：0

作者：

Shibata, Kaoru ^{[1
,2
]}

Namiki, Wataru ^{[1
]}

Nishioka, Daiki ^{[1
]}

Terabe, Kazuya ^{[1
]}

Tsuchiya, Takashi ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Tokyo Univ Sci, Katsushika, Tokyo 1258585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2025年 / 64卷 / 02期

关键词：

electric double layer; lithium solid electrolyte; space charge layer; electric double layer transistor; TEMPERATURE; CATHODE; 4H;

D O I：

10.35848/1347-4065/adabef

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a Li+ electrolyte-gated electric double-layer transistor (EDLT) using Al-doped SiC (0001) single crystal as the channel material. Thanks to the high tolerance of SiC single crystal to plasma irradiation, the Al-doped SiC EDLT was successfully fabricated with RF-sputtered Li3PO4 Li+ solid electrolyte thin film, which was previously difficult due to plasma-induced damage to the semiconductor channel. The EDLT operation of the device was confirmed by observing a 75% resistance change in the transfer characteristics. Hall measurements were employed to evaluate carrier density changes and directly investigate the behavior of the EDL at the interface. The calculated capacitance revealed contributions from both the EDL capacitance and depletion layer capacitance, indicating that the depletion layer formed on the SiC channel surface prevented accurate evaluation of EDL capacitance. For accurate EDL capacitance measurement, generating an accumulation layer on the surface of the semiconductor channel is found to be essential.

引用

页数：7