Determination of the actual valence band of a topological insulator Bi2Se3

被引：0

作者：

Higuchi, Yuki ^{[1
]}

Itaya, Ryota ^{[1
]}

Saito, Harutaka ^{[2
]}

Toichi, Yuichiro ^{[1
]}

Kobayashi, Takahiro ^{[3
]}

Tomita, Mito ^{[1
]}

Terakawa, Shigemi ^{[1
,4
]}

Suzuki, Katsuhiro ^{[5
]}

Kuroda, Kenta ^{[6
,7
]}

Kotani, Takao ^{[8
,9
]}

Matsui, Fumihiko ^{[10
]}

Suga, Shigemasa ^{[11
]}

Sato, Hitoshi ^{[12
]}

Sato, Kazunori ^{[2
,9
,13
]}

Sakamoto, Kazuyuki ^{[1
,9
,13
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Appl Phys, Osaka 5650871, Japan

[2] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Osaka 5650871, Japan

[3] Osaka Univ, Grad Sch Engn, Dept Mat & Life Sci, Osaka 5650871, Japan

[4] Osaka Univ, Ctr Future Innovat, Grad Sch Engn, Osaka 5650871, Japan

[5] Niihama Coll, Natl Inst Technol, Dept Mech Engn, Niihama, Ehime 7920805, Japan

[6] Hiroshima Univ, Grad Sch Adv Sci & Engn, Dept Phys Sci, Hiroshima 7398526, Japan

[7] Hiroshima Univ, Int Inst Sustainabil Knotted Chiral Meta Matter SK, Hiroshima 7398526, Japan

[8] Tottori Univ, Adv Mech & Elect Syst Res Ctr, Dept Engn, Tottori 6808552, Japan

[9] Osaka Univ, Ctr Spintron Res Network, Grad Sch Engn Sci, Osaka 5608531, Japan

[10] Inst Mol Sci, UVSOR Facil, Okazaki, 4448585, Japan

[11] Osaka Univ, SANKEN, Osaka 5670047, Japan

[12] Hiroshima Univ, Hiroshima Res Inst Synchrotron Radiat Sci, Hiroshima 7390046, Japan

[13] Osaka Univ, Inst Open & Transdisciplinary Res Initiat, Spintron Res Network Div, Osaka 5650871, Japan

来源：

VACUUM | 2025年 / 233卷

关键词：

Topological insulator; Bi2Se3; Direct band gap semiconductor; ARPES; DFT calculation; Quasi-particle self-consistent GW; SINGLE DIRAC CONE; SURFACE; GAP;

D O I：

10.1016/j.vacuum.2024.113944

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A proper understanding of the electronic structure of topological insulators in terms of bulk states as well as surface spin polarized states is essential for the development of spintronic devices. In this work, we investigated the electronic structure of Bi2Se3, atypical n-type topological insulator. Experimentally, we measured the band dispersions along (Gamma) over bar-(M) over bar and the constant energy contours in the entire three-dimensional Brillouin zone, and confirmed that the valence band maximum is located at the Gamma point with a binding energy 65 +/- 15 meV higher than that of the Dirac point. The theoretical calculations performed by a quasi-particle self-consistent GW method show good agreement with the experimental results on the bulk band structure. The present results indicate that Bi2Se3 is a suitable candidate for next-generation spintronic devices.

引用

页数：6