Investigating the impacts of heat sink design parameters on heat dissipation performance of semiconductor packages

被引:2
作者
Apalowo, Rilwan Kayode [1 ,2 ]
Abas, Aizat [1 ]
Salim, Muhammad Razin [1 ]
Sharif, Mohamed Fikri Mohd [3 ]
Kok, Chia Siang [3 ]
机构
[1] Univ Sains Malaysia, Sch Mech Engn, Engn Campus, Nibong Tebal 14300, Malaysia
[2] Fed Univ Technol Akure, Dept Mech Engn, PMB 704, Akure, Nigeria
[3] Western Digital Corp, MK13,Plot 301A Persiaran Cassia Selatan 1 Taman Pe, Batu Kawan 14100, Penang, Malaysia
关键词
Semiconductor package; Heat transfer; Finite volume method; Junction temperature; Heat sink temperature; Design parameters; PLATE-FIN; NATURAL-CONVECTION; TRANSFER ENHANCEMENT; PIN-FINS; FLOW; EXCHANGER; PREDICTION; MODEL; ARRAY;
D O I
10.1016/j.ijthermalsci.2024.109490
中图分类号
O414.1 [热力学];
学科分类号
摘要
This study investigates the impacts of various heat sink design parameters on the thermal dissipation performance of semiconductor packages using a heat sink as the thermal solution. A multiphase finite volume model was developed for heat transfer simulations to determine the heat sink and junction temperatures of the semiconductor assembly. Additionally, a heat transfer experiment was conducted to measure these temperatures over time. The numerical predictions closely matched the experimental results, with a maximum disparity of 0.26 % for junction temperature and 0.42 % for heat sink temperature, confirming the reliability of the numerical model. The results revealed that pin fin heat sinks demonstrated marginally superior thermal performance, reducing the junction temperature by 0.05 % compared to parallel heat sinks. Increasing the base area from 20x20 mm2 to 50x50 mm2 resulted in a significant 31.64 % reduction injunction temperature and a corresponding reduction in heat sink temperature from 60.41 degrees C to 36.42 degrees C. Extending fin height from 10 mm to 50 mm led to an 18.73 % decrease injunction temperature and a reduction in heat sink temperature from 46.07 degrees C to 34.56 degrees C. Enhancing the base thickness from 2 mm to 15 mm achieved a 24.35 % reduction injunction temperature and a decrease in heat sink temperature from 63.2 degrees C to 44.05 degrees C. The study concludes that optimizing these design parameters can substantially enhance heat dissipation, improving the reliability and efficiency of semiconductor devices.
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页数:13
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