Review of Evolution and Rising Significance of Wafer-Level Electroplating Equipment in Semiconductor Manufacturing

被引:1
作者
Jiang, Tao [1 ]
Hu, Huiyong [1 ]
机构
[1] Xidian Univ, Fac Integrated Circuit, Key Lab Minist Educ Wide Bandgap Semicond Mat & De, Xian 710071, Peoples R China
来源
ELECTRONICS | 2025年 / 14卷 / 05期
关键词
electroplating; packaging; semiconductor manufacturing; advanced nodes; Cu pillars; INTERCONNECTION TECHNOLOGY; ALUMINUM INTERCONNECTS; THICKNESS UNIFORMITY; COPPER INTERCONNECTS; TSV; METALLIZATION; ELECTRODEPOSITION; ELECTROMIGRATION; RESISTIVITY; RESISTANCE;
D O I
10.3390/electronics14050894
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Electroplating has become a cornerstone technology in semiconductor manufacturing, enabling high-performance interconnects and advanced packaging. Since the introduction of the Damascene Cu process at the 180 nm node, it has evolved to meet the demands for precision, uniformity, and scalability in miniaturized nodes and complex packaging architectures. The shift to horizontal electroplating systems has enhanced uniformity and process stability, particularly for applications such as TSVs, Cu pillars, micro-bumps, and RDLs. Emerging innovations like pulse electroplating, segmented anode control, and AI-driven monitoring are addressing the challenges of fine-pitch interconnects and emerging interconnect materials, such as cobalt. These advancements are critical for high-density interconnects used in AI, HPC, and high-frequency applications. This review explores the advancements in electroplating technologies, focusing on their role in semiconductor manufacturing. It highlights the evolving equipment designs and their implications for achieving precision, scalability, and reliability at advanced nodes. The ongoing development of electroplating equipment and techniques will support the reliability and performance of future semiconductor devices, reinforcing electroplating as a cornerstone technology in advanced packaging and fabrication.
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页数:27
相关论文
共 88 条
[41]   Recent Advances and Trends in Advanced Packaging [J].
Lau, John H. .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2022, 12 (02) :228-252
[42]   Recent Advances and Trends in Multiple System and Heterogeneous Integration With TSV Interposers [J].
Lau, John H. H. .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2023, 13 (01) :3-25
[43]   Influence of additives on electroplated copper films and their solder joints [J].
Lee, Hsuan ;
Tsai, Shan-Ting ;
Wu, Ping-Heng ;
Dow, Wei-Ping ;
Chen, Chih-Ming .
MATERIALS CHARACTERIZATION, 2019, 147 :57-63
[44]   Recent Advances in Barrier Layer of Cu Interconnects [J].
Li, Zhi ;
Tian, Ye ;
Teng, Chao ;
Cao, Hai .
MATERIALS, 2020, 13 (21) :1-22
[45]   Hybrid Bonding for Ultra-High-Density Interconnect [J].
Lu, Mei-Chien .
JOURNAL OF ELECTRONIC PACKAGING, 2024, 146 (03)
[46]   Electroplating of Cu/Sn bumps with ultrafine pitch and high uniformity for micro-LED interconnection [J].
Luo, Canlin ;
Lin, Chang ;
Ye, Jinyu ;
Zeng, Huangjie ;
Zhou, Xiongtu ;
Wu, Chaoxing ;
Zhang, Yongai ;
Sun, Jie ;
Guo, Tailiang ;
Yan, Qun .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (12)
[47]   Copper interconnects for semiconductor devices [J].
Merchant, SM ;
Kang, SH ;
Sanganeria, M ;
van Schravendijk, B ;
Mountsier, T .
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 2001, 53 (06) :43-48
[48]  
Mont FW, 2017, IEEE INT INTERC TECH
[49]   Review-Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements [J].
Moreau, S. ;
Jourdon, J. ;
Lhostis, S. ;
Bouchu, D. ;
Ayoub, B. ;
Arnaud, L. ;
Fremont, H. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (02)
[50]   Materials aspects of copper interconnection technology for semiconductor applications [J].
Murarka, SP .
MATERIALS SCIENCE AND TECHNOLOGY, 2001, 17 (07) :749-758