The Simulation of Double Germanium Quantum Dots in a Ring-Shaped Quantum Structure

被引：0

作者：

Liang, Cheng-En ^{[1
]}

Tang, Ying-Tsan ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 | 2024年

关键词：

quantum TCAD; quantum dot; charge stability;

D O I：

10.1109/SNW63608.2024.10639212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, self-assembled Ge double quantum dots embedded in a ring-shaped MOS device are simulated. We utilize Poisson, Schrodinger, and Master equation models in QTCAD integrated with the open-source Gmsh tool to simulate potential changes in quantum bits within the device. By observing charge stability diagrams and variations, we discover that under the N28 technology node, SHT is more feasible than SET for realizing multi-level ring-shaped quantum dot structures.

引用

页码：75 / 76

页数：2

共 7 条

[1]

Beaudoin Felix, 2022, Physics Letters A

[2]

Fuhrer A., 2003, PhD thesis

[3]

Gao X, 2013, J Appl Phys.

[4] Gmsh: A 3-D finite element mesh generator with built-in pre- and post-processing facilities [J].