Redirection-Manipulated Honeycomb Inclined Reflection System Enables Highly Efficient AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

被引:3
作者
Liao, Zhefu [1 ]
Lv, Zhenxing [1 ]
Tang, Bin [1 ]
Sun, Ke [1 ]
Jiang, Jingjing [1 ,2 ]
Qi, Shengli [3 ]
Liu, Sheng [1 ,4 ]
Zhou, Shengjun [1 ,2 ]
机构
[1] Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Peoples R China
[2] Wuhan JingWei Technol Co Ltd, Wuhan 430070, Peoples R China
[3] Ningbo ANN Semicond Co Ltd, Ningbo 315336, Peoples R China
[4] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金;
关键词
AlGaN; deep ultraviolet; honeycomb-shaped inclined reflection system; light-emitting diodes; pixelation strategy;
D O I
10.1002/lpor.202401698
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) are considered promising and efficient solid-state DUV light sources. However, extracting photons directly from high-Al-content AlGaN multiple quantum wells active region where the ratio of transverse magnetic (TM)/transverse electric (TE) polarization emission increases has long been challenging due to the total internal reflection phenomenon and re-absorption effect, leading to the low efficiency of DUV LEDs. Herein, a redirection-manipulated honeycomb inclined reflection system (HIRS) is demonstrated aimed at efficiently extracting TM- and TE-polarized light from DUV LEDs, and systematically analyze the influence of the HIRS configurations on the resulting redirection effect. Crucially, the investigation reveals the effective range of the HIRS redirection effect, prompting the proposal of a pixelation strategy applicable to generalized AlGaN-based DUV LEDs. This strategy is validated through the experimental fabrication of pixelated DUV LEDs integrated with HIRS. Compared to their non-pixelated, non-HIRS counterparts, these pixelated DUV LEDs integrated with HIRS achieve a light output power enhancement factor of up to 1.95, surpassing all previously reported pixelated DUV LEDs. Furthermore, the double-side-coated sapphire is introduced as a package plate to improve reliability and optical performance and develop a miniaturized sterilization module for effective water purification. This work not only provides guidance for high-power AlGaN-based DUV LEDs design and manufacture but also advances the development of efficient solutions for water purification.
引用
收藏
页数:9
相关论文
共 34 条
[1]   Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing [J].
Bergmann, Michael A. ;
Enslin, Johannes ;
Guttmann, Martin ;
Sulmoni, Luca ;
Ploch, Neysha Lobo ;
Hjort, Filip ;
Kolbe, Tim ;
Wernicke, Tim ;
Kneissl, Michael ;
Haglund, Asa .
ACS PHOTONICS, 2023, 10 (02) :368-373
[2]   Fabricating and investigating a beveled mesa with a specific inclination angle to improve electrical and optical performances for GaN-based micro-light-emitting diodes [J].
Chu, Chunshuang ;
Jia, Yaru ;
Hang, Sheng ;
Chen, Yongfei ;
Jia, Tong ;
Tian, Kangkai ;
Zhang, Yonghui ;
Zhang, Zi-hui .
OPTICS LETTERS, 2023, 48 (22) :5863-5866
[3]   Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices [J].
Cui, Siyuan ;
Sun, Ke ;
Liao, Zhefu ;
Zhou, Qianxi ;
Jin, Leonard ;
Jin, Conglong ;
Hu, Jiahui ;
Wen, Kuo-Sheng ;
Liu, Sheng ;
Zhou, Shengjun .
SCIENCE BULLETIN, 2024, 69 (13) :2080-2088
[4]   Monolithically Integrating III-Nitride Quantum Structure for Full-Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth [J].
Fan, Benjie ;
Zhao, Xiaoyu ;
Zhang, Jingqiong ;
Sun, Yuechang ;
Yang, Hongzhi ;
Guo, L. Jay ;
Zhou, Shengjun .
LASER & PHOTONICS REVIEWS, 2023, 17 (03)
[5]   Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm [J].
Guttmann, Martin ;
Mehnke, Frank ;
Belde, Bettina ;
Wolf, Fynn ;
Reich, Christoph ;
Sulmoni, Luca ;
Wernicke, Tim ;
Kneissl, Michael .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
[6]   Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array [J].
Hu, Hongpo ;
Tang, Bin ;
Wan, Hui ;
Sun, Haiding ;
Zhou, Shengjun ;
Dai, Jiangnan ;
Chen, Changqing ;
Liu, Sheng ;
Guo, L. Jay .
NANO ENERGY, 2020, 69
[7]   Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperature- annealed AlN/Sapphire template [J].
Jiang, Ke ;
Liang, Simeng ;
Sun, Xiaojuan ;
Ben, Jianwei ;
Qu, Liang ;
Zhang, Shanli ;
Chen, Yang ;
Zheng, Yucheng ;
Lan, Ke ;
Li, Dabing ;
Xu, Ke .
OPTO-ELECTRONIC ADVANCES, 2023, 6 (09)
[8]   The emergence and prospects of deep-ultraviolet light-emitting diode technologies [J].
Kneissl, Michael ;
Seong, Tae-Yeon ;
Han, Jung ;
Amano, Hiroshi .
NATURE PHOTONICS, 2019, 13 (04) :233-244
[9]   High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers [J].
Lang, J. ;
Xu, F. J. ;
Ge, W. K. ;
Liu, B. Y. ;
Zhang, N. ;
Sun, Y. H. ;
Wang, M. X. ;
Xie, N. ;
Fang, X. Z. ;
Kang, X. N. ;
Qin, Z. X. ;
Yang, X. L. ;
Wang, X. Q. ;
Shen, B. .
APPLIED PHYSICS LETTERS, 2019, 114 (17)
[10]   Arrays of Truncated Cone AIGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission [J].
Lee, Jong Won ;
Park, Jun Hyuk ;
Kim, Dong Yeong ;
Schubert, E. Fred ;
Kim, Jungsub ;
Lee, Jinsub ;
Kim, Yong-Il ;
Park, Youngsoo ;
Kim, Jong Kyu .
ACS PHOTONICS, 2016, 3 (11) :2030-2034