Van der Waals Epitaxy of High-Quality Transition Metal Dichalcogenides on Single-Crystal Hexagonal Boron Nitride

被引:1
作者
Huang, Jidong [1 ,2 ]
Meng, Junhua [3 ]
Yang, Huabo [1 ,2 ]
Jiang, Ji [1 ,2 ]
Xia, Zhengchang [1 ,2 ]
Zhang, Siyu [1 ,2 ]
Zeng, Libin [1 ,2 ]
Yin, Zhigang [1 ,2 ]
Zhang, Xingwang [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
基金
中国国家自然科学基金;
关键词
heterostructures; hexagonal boron nitride; transition metal dichalcogenides; van der Waals epitaxy; XRD rocking curve; TUNGSTEN DISELENIDE; LAYER; GRAPHENE; GROWTH; HETEROSTRUCTURES; INTEGRATION; FILMS;
D O I
10.1002/smtd.202401296
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Van der Waals (vdW) heterostructures comprising of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) are promising building blocks for novel 2D devices. The vdW epitaxy provides a straightforward integration method for fabricating high-quality TMDs/h-BN vertical heterostructures. In this work, the vdW epitaxy of high-quality single-crystal HfSe2 on epitaxial h-BN/sapphire substrates by chemical vapor deposition is demonstrated. The epitaxial HfSe2 layers exhibit a uniform and atomically sharp interface with the underlying h-BN template, and the epitaxial relationship between HfSe2 and h-BN/sapphire is determined to HfSe2 (0001)[12<overline>${\mathrm{\bar{2}}}$10]//h-BN (0001)[11<overline>${\mathrm{\bar{1}}}$00]//sapphire (0001)[11<overline>${\mathrm{\bar{1}}}$00]. Impressively, the full width at half maximum of the rocking curve for the epitaxial HfSe2 layer on single-crystal h-BN is as narrow as 9.6 arcmin, indicating an extremely high degree of out-plane orientation and high crystallinity. Benefitting from the high crystalline quality of HfSe2 epilayers and the weak interfacial scattering of HfSe2/h-BN, the photodetector fabricated from the vdW epitaxial HfSe2 on single-crystal h-BN shows the best performance with an on/off ratio of 1 x 104 and a responsivity up to 43 mA W-1. Furthermore, the vdW epitaxy of other TMDs such as HfS2, ZrS2, and ZrSe2 is also experimentally demonstrated on single-crystal h-BN, suggesting the broad applicability of the h-BN template for the vdW epitaxy. Several high-quality single-crystalline transition metal dichalcogenides are directly grown on an epitaxial h-BN/sapphire substrate via vdW epitaxy, indicating the h-BN is an ideal template for vdW epitaxy. The full width at half maximum of the X-ray diffraction rocking curve for the HfSe2 layers on single-crystal h-BN is only 9.6 arcmin, indicating an extremely high degree of out-plane orientation and high crystallinity. image
引用
收藏
页数:9
相关论文
共 49 条
[1]   Anomalous Conductivity Switch Observed in Treated Hafnium Diselenide Transistors [J].
Albagami, Malak ;
Alrasheed, Abdullah ;
Alharbi, Mervat ;
Alhazmi, Abrar ;
Wong, Kin ;
Qasem, Hussam ;
Alodan, Sarah ;
Alolaiyan, Olaiyan ;
Wang, Kang L. ;
Amer, Moh R. .
ADVANCED ELECTRONIC MATERIALS, 2020, 6 (05)
[2]   Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers [J].
Britnell, Liam ;
Gorbachev, Roman V. ;
Jalil, Rashid ;
Belle, Branson D. ;
Schedin, Fred ;
Katsnelson, Mikhail I. ;
Eaves, Laurence ;
Morozov, Sergey V. ;
Mayorov, Alexander S. ;
Peres, Nuno M. R. ;
Castro Neto, Antonio H. ;
Leist, Jon ;
Geim, Andre K. ;
Ponomarenko, Leonid A. ;
Novoselov, Kostya S. .
NANO LETTERS, 2012, 12 (03) :1707-1710
[3]  
Chhowalla M, 2016, NAT REV MATER, V1, DOI [10.1038/natrevmats2016.52, 10.1038/natrevmats.2016.52]
[4]   Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy - a homoepitaxial approach [J].
Dabrowska, Aleksandra Krystyna ;
Tokarczyk, Mateusz ;
Kowalski, Grzegorz ;
Binder, Johannes ;
Bozek, Rafal ;
Borysiuk, Jolanta ;
Stepniewski, Roman ;
Wysmolek, Andrzej .
2D MATERIALS, 2021, 8 (01)
[5]   Transistors based on two-dimensional materials for future integrated circuits [J].
Das, Saptarshi ;
Sebastian, Amritanand ;
Pop, Eric ;
McClellan, Connor J. ;
Franklin, Aaron D. ;
Grasser, Tibor ;
Knobloch, Theresia ;
Illarionov, Yury ;
Penumatcha, Ashish V. ;
Appenzeller, Joerg ;
Chen, Zhihong ;
Zhu, Wenjuan ;
Asselberghs, Inge ;
Li, Lain-Jong ;
Avci, Uygar E. ;
Bhat, Navakanta ;
Anthopoulos, Thomas D. ;
Singh, Rajendra .
NATURE ELECTRONICS, 2021, 4 (11) :786-799
[6]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[7]  
Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/NNANO.2014.207, 10.1038/nnano.2014.207]
[8]   Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride [J].
Fu, Deyi ;
Zhao, Xiaoxu ;
Zhang, Yu-Yang ;
Li, Linjun ;
Xu, Hai ;
Jang, A-Rang ;
Yoon, Seong In ;
Song, Peng ;
Poh, Sock Mui ;
Ren, Tianhua ;
Ding, Zijing ;
Fu, Wei ;
Shin, Tae Joo ;
Shin, Hyeon Suk ;
Pantelides, Sokrates T. ;
Zhou, Wu ;
Loh, Kian Ping .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (27) :9392-9400
[9]   Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays [J].
Fukamachi, Satoru ;
Solis-Fernandez, Pablo ;
Kawahara, Kenji ;
Tanaka, Daichi ;
Otake, Toru ;
Lin, Yung-Chang ;
Suenaga, Kazu ;
Ago, Hiroki .
NATURE ELECTRONICS, 2023, 6 (02) :126-+
[10]   Hunting for Monolayer Boron Nitride: Optical and Raman Signatures [J].
Gorbachev, Roman V. ;
Riaz, Ibtsam ;
Nair, Rahul R. ;
Jalil, Rashid ;
Britnell, Liam ;
Belle, Branson D. ;
Hill, Ernie W. ;
Novoselov, Kostya S. ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Geim, Andre K. ;
Blake, Peter .
SMALL, 2011, 7 (04) :465-468