4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

被引：0

作者：

Yao, Lei ^{[1
,2
]}

Xu, Yu ^{[2
,3
]}

Wang, Yuning ^{[1
,2
]}

Wang, Guobin ^{[2
,4
]}

Xu, Jianxi ^{[1
,2
]}

Chen, Jingjing ^{[2
]}

Wang, Liang ^{[1
,2
]}

Guo, Shiping ^{[5
]}

Cao, Bing ^{[6
,7
,8
]}

Ke, Xu ^{[2
,3
,4
]}

机构：

[1] Univ Sci & Technol China, Sch Nanotech & Nanobio, Hefei 230026, Anhui, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Suzhou 215123, Jiangsu, Peoples R China

[3] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Jiangsu, Peoples R China

[4] Shenyang Natl Lab Mat Sci, Shenyang 110010, Liaoning, Peoples R China

[5] Adv Microfabricat Equipment Inc, Pudong 201201, Shanghai, Peoples R China

[6] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Sch Optoelect Sci & Engn, Suzhou 215006, Jiangsu, Peoples R China

[7] Soochow Univ, Key Lab Adv Opt Mfg Technol Jiangsu Prov, Suzhou 215006, Jiangsu, Peoples R China

[8] Soochow Univ, Key Lab Modern Opt Technol Educ Minist China, Suzhou 215006, Jiangsu, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 11期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

high-quality; nano-patterned; AlN; dislocation densities; thick film; ALGAN; IMPROVEMENT; TEMPLATES;

D O I：

10.35848/1347-4065/ad85b9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-quality AlN thick film with 11 mu m thickness and low defect density was grown on a 4 inch hexagonal hole nano-patterned sapphire substrate by metal oxide chemical vapor deposition. The density of dislocation etch pits in the AlN heteroepitaxial film reached 1.1 x 107 cm-2. The surface and microstrcutres of the AlN thick film were characterized in detail. The dislocation evolution mechanism and stress evolution of AlN were investigated. Dislocations were mainly generated at the interface between the sapphire and AlN, and the voids above the patterned region were generated by the undesirable grain boundaries caused by the lateral epitaxy of AlN and the substrate during the growth process, which prompted a large number of screw dislocations to bend and merge, and while some mixed dislocations to merge and extend upwards, resulting in a high-quality AlN thick film.

引用

页数：5

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