Stretchable resistive switching memory devices for wearable systems
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Kim, Hyojung
[1
]
Im, In Hyuk
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机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
Seoul Natl Univ, Engn Res Inst Adv Mat, Seoul 08826, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Im, In Hyuk
[2
,3
]
Hyun, Daijoon
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Sejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Hyun, Daijoon
[1
]
Hilal, Muhammad
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Sejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Hilal, Muhammad
[1
]
Cai, Zhicheng
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Sejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Cai, Zhicheng
[1
]
Yang, Seok Joo
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Gyeongsang Natl Univ, Dept Chem Engn, Jinju 52828, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Yang, Seok Joo
[4
]
Shim, Young-Seok
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Korea Univ Technol & Educ, Sch Energy Mat Chem Engn, Cheonan 31253, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Shim, Young-Seok
[5
]
Moon, Cheon Woo
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Soonchunhyang Univ, Dept Display Mat Engn, Asan 31538, South KoreaSejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
Moon, Cheon Woo
[6
]
机构:
[1] Sejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[3] Seoul Natl Univ, Engn Res Inst Adv Mat, Seoul 08826, South Korea
[4] Gyeongsang Natl Univ, Dept Chem Engn, Jinju 52828, South Korea
[5] Korea Univ Technol & Educ, Sch Energy Mat Chem Engn, Cheonan 31253, South Korea
[6] Soonchunhyang Univ, Dept Display Mat Engn, Asan 31538, South Korea
Stretchable electronics;
Resistive switching memory;
Stretchable structures and materials;
D O I:
10.1007/s43207-025-00497-y
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Smart healthcare and medical services have been among the fastest-growing AI applications. Stretchable electronics are being considered for flexible/stretchable paper displays, wearable computers, artificial electronic skin, and biomedical devices. Complex and dynamic mechanical environments in wearable applications that demand conformation and conformance necessitate stretchable electronic devices with malleable, mechanical properties. Exploring and discovering devices are popular, because electronic devices need flexible memory to store and retrieve data. The resistive switching memory device is the ideal contender for stretchable memory because of its basic metal-insulator-metal structure and the benefits of the patterned and crossbar-structured memory generated by oxygen vacancies and conductive metal filaments. Stretchable electronics and manufacturing methods are appealing, because wearable and integrated electronics systems are in demand. More innovative materials and device architecture have increased electronic device adaptability and lower production costs. This paper describes wearable and stretchable resistive switching memory device structures and materials. Next, it explains their operation and resistive switching. Also introduced are stretchable resistive switching memory electrodes, insulating layers, crossbar array topologies, and artificial synapse memristors. Moreover, stretchable memristors are utilized in smart sensor systems for data processing and storage. They can be employed in environmental sensors or biosensors to enhance signal processing and data storage. The stretchable memristor, now in its initial stage of development, exhibits significant potential and opportunity for enhancement. This early stage highlights the potential for significant progress shortly.
机构:
Gen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Sun, Lu
Hao, Xiamin
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机构:
Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Hao, Xiamin
Meng, Qingling
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机构:
Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Meng, Qingling
Wang, Ligen
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Gen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Wang, Ligen
Liu, Feng
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机构:
Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Liu, Feng
Zhou, Miao
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机构:
Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China