Stretchable resistive switching memory devices for wearable systems

被引:0
|
作者
Kim, Hyojung [1 ]
Im, In Hyuk [2 ,3 ]
Hyun, Daijoon [1 ]
Hilal, Muhammad [1 ]
Cai, Zhicheng [1 ]
Yang, Seok Joo [4 ]
Shim, Young-Seok [5 ]
Moon, Cheon Woo [6 ]
机构
[1] Sejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul 05006, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[3] Seoul Natl Univ, Engn Res Inst Adv Mat, Seoul 08826, South Korea
[4] Gyeongsang Natl Univ, Dept Chem Engn, Jinju 52828, South Korea
[5] Korea Univ Technol & Educ, Sch Energy Mat Chem Engn, Cheonan 31253, South Korea
[6] Soonchunhyang Univ, Dept Display Mat Engn, Asan 31538, South Korea
基金
新加坡国家研究基金会;
关键词
Stretchable electronics; Resistive switching memory; Stretchable structures and materials;
D O I
10.1007/s43207-025-00497-y
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Smart healthcare and medical services have been among the fastest-growing AI applications. Stretchable electronics are being considered for flexible/stretchable paper displays, wearable computers, artificial electronic skin, and biomedical devices. Complex and dynamic mechanical environments in wearable applications that demand conformation and conformance necessitate stretchable electronic devices with malleable, mechanical properties. Exploring and discovering devices are popular, because electronic devices need flexible memory to store and retrieve data. The resistive switching memory device is the ideal contender for stretchable memory because of its basic metal-insulator-metal structure and the benefits of the patterned and crossbar-structured memory generated by oxygen vacancies and conductive metal filaments. Stretchable electronics and manufacturing methods are appealing, because wearable and integrated electronics systems are in demand. More innovative materials and device architecture have increased electronic device adaptability and lower production costs. This paper describes wearable and stretchable resistive switching memory device structures and materials. Next, it explains their operation and resistive switching. Also introduced are stretchable resistive switching memory electrodes, insulating layers, crossbar array topologies, and artificial synapse memristors. Moreover, stretchable memristors are utilized in smart sensor systems for data processing and storage. They can be employed in environmental sensors or biosensors to enhance signal processing and data storage. The stretchable memristor, now in its initial stage of development, exhibits significant potential and opportunity for enhancement. This early stage highlights the potential for significant progress shortly.
引用
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页数:15
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