Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

被引:0
作者
Kobayashi, Atsushi [1 ]
Maeda, Takuya [2 ]
Akiyama, Toru [3 ]
Kawamura, Takahiro [3 ]
Honda, Yoshio [4 ]
机构
[1] Tokyo Univ Sci, Dept Mat Sci & Technol, Tokyo 1258585, Japan
[2] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 1138656, Japan
[3] Mie Univ, Innovat Ctr Semicond & Digital Future, Grad Sch Engn, Tsu 5148507, Japan
[4] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya 4648601, Japan
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2025年
关键词
ferroelectrics; semiconductors; sputter epitaxy; superconductors; transition metal nitrides; THIN-FILMS; ELECTRONIC-PROPERTIES; OPTICAL-PROPERTIES; BETA-NB2N FILMS; GAN; RF; MICROSTRUCTURE; TEMPERATURES; SENSITIVITY; TRANSPORT;
D O I
10.1002/pssa.202400896
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this review, the epitaxial growth of transition metal nitrides (TMNs) is explored, focusing on sputter epitaxy as a versatile method for developing advanced materials such as NbN superconductors and ScAlN ferroelectrics. In the recent studies, it is shown that, unlike conventional growth techniques, sputter epitaxy enables the deposition of high-melting-point transition metals, offering advantages for growing thin films with unique properties. In this review, recent progress in integrating TMNs with nitride semiconductors to fabricate hybrid devices that exhibit both superconducting and ferroelectric characteristics is addressed. These developments underscore the potential of sputter epitaxy as a foundational tool for advancing the next generation of electronic and quantum devices.
引用
收藏
页数:10
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