共 2 条
Non-volatile capacitive memory based on spiropyran-derived copolymers for multi-level and ultralow-power data storage and protection
被引:0
|作者:
Yang, Rumeng
[1
,2
,4
,5
]
Zhang, Chuang
[1
,2
,4
,5
]
Zhang, Xiaocheng
[1
,2
,4
,5
]
Liu, Jie
[2
,4
,5
]
Chang, Chia-Chih
[3
]
Wu, Xiaosong
[2
,4
,5
]
Ji, Ruiduan
[1
,2
,4
,5
]
Zhu, Huifen
[2
,4
,5
]
Wang, Donghui
[1
,2
,4
,5
]
Feng, Shiyu
[1
,2
,4
,5
]
Huang, Weiguo
[1
,2
,4
,5
]
机构:
[1] Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
[2] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, 155 Yangqiao West Rd, Fuzhou 350002, Fujian, Peoples R China
[3] Natl Yang Ming Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan
[4] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350002, Fujian, Peoples R China
[5] Univ Chinese Acad Sci, Fujian Coll, Fuzhou 350002, Fujian, Peoples R China
基金:
中国国家自然科学基金;
关键词:
FIELD-EFFECT TRANSISTOR;
POLYMER MEMORY;
NANOPARTICLES;
MOLECULES;
SWITCHES;
HUMIDITY;
DEVICE;
D O I:
10.1039/d4tc04660a
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The rapid development of information technology requires memory with low-power consumption and high-storage density. Traditional memory systems relying on different current levels to represent various storage states consume significant power and generate massive Joule heat, limiting their applications particularly in circuits with extraordinal high-storage density. In contrast, capacitive memories use capacitance instead of current to denote storage states, substantially reducing power consumption and opening new possibilities for next-generation, high-density integrated circuits. Incorporating molecular switches into the dielectric layer of capacitive memories enables multi-level data-storage through their reversible isomerization. However, challenges remain in enhancing the storage density while maintaining low-power consumption. Here, we developed a capacitive memory based on poly(pentafluorophenyl acrylate-co-spiropyran) (named pPFPA-co-SP) with multi-stimuli responsive behaviors. By precisely controlling the responses to different stimuli, we achieved a capacitive memory with up to 8 storage levels and an exceptionally low power consumption of 1.91 x 10-10 W-3 to 5 orders of magnitude lower than that of conventional non-volatile memories. Additionally, we designed a sophisticated data protection system on this capacitor by manipulating three stimuli (i.e., light, humidity, and acids), enabling the data to be decrypted, hidden, erased, and destroyed on demand, showcasing vast potential applications in smart electronics.
引用
收藏
页码:6052 / 6062
页数:11
相关论文