Advancing Silicon Surface Passivation by Copper Doped Zinc Oxide and Graphene Oxide Nanocomposite Thin Films

被引：0

作者：

Salem, Moez ^{[1
]}

Haouas, Amel ^{[2
]}

Almohammedi, Abdullah ^{[3
]}

Ghannam, Hajar ^{[4
]}

机构：

[1] Fac Sci Gabes, Dept Phys, Gabes 6079, Tunisia

[2] Northern Border Univ, Fac Sci, Dept Chem, Ar Ar, Saudi Arabia

[3] Islamic Univ Madinah, Fac Sci, Dept Phys, Madinah 42351, Saudi Arabia

[4] ERCMN, Mat Syst & Energy Engn Lab Maseel, UAE U01FST, Tanger 9000, Morocco

来源：

SILICON | 2025年 / 17卷 / 06期

关键词：

Silicon; Surface treatment; Passivation; ZnO/Graphene oxide; NANOCRYSTALS;

D O I：

10.1007/s12633-025-03282-y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Copper (Cu)-doped Zinc Oxide (ZnO)-Graphene Oxide (GO) nanostructures (0, 0.5, 1, and 2 at.%) were synthesized via hydrothermal methods and deposited on silicon substrates using spin coating. XRD analysis revealed well-crystallized ZnO nanoparticles with crystallite sizes between 79 and 108 nm, while Cu doping induced lattice distortions, reflected by increased microstrain and dislocation density. AFM measurements showed a reduction in surface roughness and improved homogeneity with Cu doping. Optical characterizations indicated a reduction in the band gap (from 3.26 eV to 3.24 eV) and a decrease in photoluminescence intensity of the visible band, suggesting degradation of recombination sites. Reflectance measurements confirmed enhanced light absorption with higher Cu doping. Carrier lifetime increased significantly, reaching 165 mu s at 2% Cu doping, highlighting improved charge carrier dynamics. These results demonstrate that Cu-doped ZnO-GO nanocomposites are promising candidates for enhanced surface passivation in silicon-based photovoltaic devices.

引用

页码：1403 / 1411

页数：9

共 40 条

[1] Enhanced the Cu2+ doping on the structural, optical and electrical properties of zinc oxide (ZnO) nanoparticles for electronic device applications [J].