Fingerprint Recognition Matrix Based on Photomultiplication-Type Organic Photodetectors with a Signal-to-Noise Ratio of 51,400

被引:0
作者
Yao, Qi [1 ,2 ]
Li, Shipei [2 ]
Qin, Yunke [2 ]
Zhao, Xingchao [3 ]
Wang, Lei [2 ]
Li, Yangbing [2 ]
Jeong, Sang Young [4 ]
Ma, Xiaoling [3 ]
Woo, Han Young [4 ]
Zhang, Fujun [3 ]
Yu, Zhinong [1 ]
Yuan, Guangcai [2 ]
机构
[1] Beijing Inst Technol, Sch Opt & Photon, Beijing 100081, Peoples R China
[2] BOE Technol Grp Co Ltd, Beijing 100176, Peoples R China
[3] Beijing Jiaotong Univ, Sch Phys Sci & Engn, Adv Organ Mat & Devices Lab, Beijing 100044, Peoples R China
[4] Korea Univ, Coll Sci, Organ Optoelect Mat Lab, Seoul 02841, South Korea
基金
中国国家自然科学基金;
关键词
photomultiplication; organic photodetectors; fingerprint sensor; silicon thin-film transistor; readout circuit; INJECTION;
D O I
10.1021/acsami.4c21810
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 x 1012 Jones specific detectivity at 610 nm under -6 V bias and a high signal-to-noise ratio of 51,400 at -5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.
引用
收藏
页码:15709 / 15717
页数:9
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