Dual interfacial modification of hematite electron transport layer for efficient and stable perovskite solar cells

被引:1
作者
Bilal, Abu Summama Sadavi [1 ]
Bilal, Muhammad Meesum [2 ]
Zia, Muhammad Faheem [3 ]
Feroz, Shazia [4 ]
Ullah, Muhammad Nauman [5 ]
Khan, Muhammad Ajmal [6 ]
Bano, Nargis [7 ]
Hussain, Ijaz [8 ]
Fatima, Rida [9 ]
机构
[1] Univ Engn & Technol, Dept Mech Engn, Taxila 47080, Pakistan
[2] Univ Sci & Technol China, Sch Phys Sci, Dept Modern Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[3] Univ Wah, Wah Engn Coll, Dept Mech Engn, POB 47040, Wah Cantt, Pakistan
[4] Benazir Bhutto Shaheed Univ Technol & Skill Dev Kh, Elect Engn Technol, Khairpur 66151, Pakistan
[5] Natl Univ Sci & Technol NUST, Sch Chem & Mat Engn SCME, Dept Chem Engn, Islamabad 44000, Pakistan
[6] COMSATS Univ Islamabad, Dept Phys, Lahore Campus, Lahore 54000, Pakistan
[7] King Saud Univ, Astron Coll Sci, Dept Phys, POB 2455, Riyadh 11451, Saudi Arabia
[8] ETHICSS Int Ctr Sustainabil & Secur, 21 Colliston Dr, Dundee DD5 3TL, Scotland
[9] Bahauddin Zakariya Univ, Inst Chem Sci, Multan 60000, Pakistan
关键词
Hematite; Interfacial layer; Stability; Perovskite solar cell;
D O I
10.1016/j.rineng.2025.103954
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This research investigates the dual interfacial modification of hematite (Fe2O3) electron transport layers (ETL) in perovskite solar cells (PSCs) by introducing 4-trifluorophenylammonium iodide (CF3PhAI) to improve device performance and stability. The device configuration, ITO/alpha Fe2O3/CF3PhAI/Perovskite/CF3PhAI/Spiro-OMe- TAD/Au, aims to address interfacial challenges and charge recombination, which often limit PSC efficiency. The CF3PhAI interfacial layer applied both above and below the perovskite layer, effectively passivates interfacial defects, improves charge extraction, and reduces recombination. This dual interfacial modification resulted in a significant efficiency improvement, with the target device achieving a power conversion efficiency (PCE) of 15.63 %, outperforming devices with single (14.26 %) or no interfacial layers (10.93 %). The optimized device retained 55 % of its initial efficiency after 250 h under continuous testing, a notable improvement over the other devices. Characterization techniques, including JV curves, PL, TRPL, and SCLC measurements, were utilized to analyze the improvements in charge transport, recombination, and overall device performance. This study highlights the potential of CF3PhAI as a dual interfacial layer, providing an effective approach to increase both the efficiency and stability of PSCs and contributing valuable insights into the development of commercially viable and stable PSC technologies.
引用
收藏
页数:10
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