Design and Analysis of Low-Power Protection Circuits for LDO Regulators

被引:0
|
作者
Deb, Arnab [1 ]
Selvakumar, David [1 ]
Mervin, J. [1 ]
Ghosh, Anurupa [1 ]
机构
[1] Secured Hardware & VLSI Design Grp Ctr Dev Adv Co, Bangalore, Karnataka, India
来源
EMERGING VLSI DEVICES, CIRCUITS AND ARCHITECTURES, VDAT 2023 | 2025年 / 1234卷
关键词
Under voltage lockout; Thermal shutdown; Current foldback; Capless LDO; Low quiescent current;
D O I
10.1007/978-981-97-5269-0_17
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article investigates the design, simulation, and performance assessment of three protection circuits, namely, Under Voltage Lockout (UVLO), Thermal Shutdown (TSD), and Current Foldback Circuit (CFC) for overload/short-circuit protection for a Low Dropout (LDO) regulator with a fully CMOS-based Bandgap Reference (BGR) circuit. The focus is on enhancing the lifespan and effectiveness of the regulator while safeguarding it from excessive loads and high temperatures. The TSD circuit, offering a hysteresis width of 14.. C, maintains a maximum power dissipation of 1 mu W regardless of supply voltage fluctuations. The UVLO circuit permits regulator activation at a supply voltage of 1.24 V, consuming only 1.7 mu W. The CFC effectively limits the output current to 173.5 mA and foldbacks to 36.4 mA, with a power dissipation of just 7.7 mu W. Moreover, the regulator exhibits rapid transient response, transitioning in 1 mu s as the load fluctuates between 1mA and 80mA, within a supply voltage range of 1.7-2.2 V. The integrated system, comprising the regulator, bandgap reference (BGR) circuit, UVLO, TSD, and CFC, has a 41 mu A of maximum quiescent current (I-q). The system achieves overall efficiencies of 88% and 65% at input voltages of 1.7 V and 2.2 V, respectively.
引用
收藏
页码:197 / 213
页数:17
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