Recent progress on micro-LEDs

被引:13
|
作者
Pandey, Ayush [1 ]
Reddeppa, Maddaka [1 ]
Mi, Zetian [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USA
来源
LIGHT-ADVANCED MANUFACTURING | 2023年 / 4卷 / 04期
基金
美国国家科学基金会;
关键词
LED; Micro-LED; Nanowire; GaN; Display; LIGHT-EMITTING-DIODES; SELECTIVE-AREA GROWTH; INDUCED ETCH DAMAGE; EXTERNAL QUANTUM EFFICIENCY; INDUCTIVELY-COUPLED PLASMA; DIRECT EPITAXIAL APPROACH; POLAR INGAN NANOWIRES; GREEN LEDS; SURFACE RECOMBINATION; ACHIEVING ULTRASMALL;
D O I
10.37188/lam.2023.031
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving towards displays with high efficiency, small size, and ultrahigh resolution, the development of optoelectronic devices with scales on the order of a few microns or even smaller has attracted considerable interest. In this review article we provide an overview of some of the recent developments of visible micron-scale light emitting diodes (LEDs). The major challenges of higher surface recombination for smaller size devices, the difficulty in attaining longer emission wavelengths, and the complexity of integrating individual, full color devices into a display are discussed, along with techniques developed to address them. We then present recent work on bottom-up nanostructure-based submicron LEDs, highlighting their unique advantages, recent developments, and promising potential. Finally, we present perspectives for future development of micro-LEDs for higher efficiencies, better color output and more efficient integration.
引用
收藏
页码:2 / 24
页数:24
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