Femtosecond laser-induced ultrafast electron dynamics and band gap renormalization in InSb

Studying ultrafast dynamical processes is essential for understanding light-matter coupling, which is crucial for the optoelectronic and photonic applications of semiconductor materials. Herein, we investigate the evolution of electron population near the conduction band minimum (CBM) and band gap in InSb (100) crystal under different laser fluences using time- and angle-resolved photoelectron spectra (TrARPES). In contrast to the pumpfluence-independent fast growth process (FP) of the electron population, the slow process (SP) is fluence sensitive, which is similar to the temperature-dependent behavior observed in InSb (110). In addition, we observe a band gap enlargement with increasing the photoexcitation flux. Comprehensive analysis reveals that these observed diverse results are attributed to the laser-tunable dielectric function on the surface of InSb. Our findings not only enhance the understanding of laser-semiconductor interactions but also broaden the potential applications in the field of optoelectronic and photonic devices.