Monolithically Integrated Quantum Dots in a 22-nm Fully Depleted Silicon-on-Insulator Process Operating at 3 K

Quantum computers comprising large-scale arrays of qubits will enable complex algorithms to be executed to provide a quantum advantage for practical applications. A prerequisite for this milestone is a power-efficient qubit control and detection system operating at cryogenic temperatures. Implementing such systems in complementary metal-oxide-semiconductor (CMOS) technology offers clear advantages in terms of scalability. Here, we present a fully integrated quantum dot array in which silicon quantum wells are co-located with control and detection circuitry on the same die in a commercial 22-nm fully depleted silicon-on-insulator (FDSOI) process. Our system comprises a two-dimensional quantum dot array, integrated with 8 detectors and 32 injectors, operating at 3 K inside a cryo-cooler. The power consumption of the control and detection circuitry is 2.5 mW per qubit without body biasing. The design utilizes 0.8-V nominal Vt$$ {V}_t $$ devices. The setup allows us to verify discrete charge injection control and detection at the quantum dot array and demonstrate the feasibility of this architecture for scaling up the existing quantum core to hundreds and thousands of physical qubits.