Temperature Dependence of Bilinear Magnetoelectric Resistance (BMR) in Topological Insulator Bi2Se3

被引：0

作者：

Jeong, Seonghoon ^{[1
]}

Yang, Hyukjae ^{[1
]}

Chung, Sunjae ^{[1
]}

Lee, Kyungjae ^{[2
]}

Lee, Sanghoon ^{[2
]}

机构：

[1] Korea Natl Univ Educ, Dept Phys Educ, Cheongju 28173, South Korea

[2] Korea Univ, Dept Phys, Seoul 02841, South Korea

来源：

JOURNAL OF THE KOREAN MAGNETICS SOCIETY | 2025年 / 35卷 / 01期

关键词：

topological insulator; Rashba spin-orbit coupling (ROC); spin-momentum locking; Bilinear Magnetoelectric Resistance (BMR); SPIN-POLARIZED CURRENTS; ELECTRICAL DETECTION;

D O I：

10.4283/JKMS.2025.35.1.014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we investigate the Bilinear Magnetoelectric Resistance (BMR) phenomenon in the topological insulator Bi(2)Se(3 )grown on a (100) GaAs substrate. By varying the sample temperature from 10 K to 60 K, we measured the out-of-plane tilt angle of the spin texture induced by Rashba spin-orbit coupling (ROC). Through BMR measurements, we extracted the parameter lambda, which quantifies the strength of hexagonal warping influencing the Rashba spin-orbit coupling. To examine the relationship between lambda and the Fermilevel electron density, we calculated the two-dimensional electron density using Hall effect measurements over the same temperature range. A significant correlation between lambda and electron density was observed at low temperatures. These experimental findings suggest that the spin-momentum locking phenomenon in topological insulators is strongly influenced by temperature-dependent variations in electron density

引用

页码：14 / 18

页数：5

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