A Review of Challenges, Solutions, and Improvements in the Performance of Deep Ultraviolet Semiconductor Laser Diodes (DUV LDs)

被引：1

作者：

Rehman, Hameed Ur ^{[1
]}

Bi, Wengang ^{[1
]}

Rahman, Naveed Ur ^{[2
]}

Haq, Inayatul ^{[3
]}

Ullah, Ikram ^{[7
]}

Wang, Fang ^{[3
,4
,5
,6
]}

Liu, Yuhuai ^{[3
,4
,5
,6
]}

机构：

[1] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Guangdong, Peoples R China

[2] Bacha Khan Univ Charsadda, Dept Phys, Charsadda 24420, Kpk, Pakistan

[3] Zhengzhou Univ, Natl Ctr Int Joint Res Elect Mat & Syst, Sch Elect & Informat Engn, Int Joint Lab Elect Mat & Syst Henan Prov, Zhengzhou 450001, Henan, Peoples R China

[4] Zhengzhou Univ, Inst Intelligence Sensing, Zhengzhou 450001, Henan, Peoples R China

[5] Zhengzhou Univ, Res Inst Ind Technol Co Ltd, Zhengzhou 450001, Henan, Peoples R China

[6] Zhengzhou Way Do Elect Co Ltd, Zhengzhou 450001, Henan, Peoples R China

[7] Univ Lakki Marwat, Dept Phys, Lakki Marwat 28420, Khyber Pakhtunk, Pakistan

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2024年 / 6卷 / 12期

基金：

中国国家自然科学基金;

关键词：

DUV LDs; Diode; EBL; Wave guide layer; Quantum barrier; Quantum well; Cladding layer; LIGHT-EMITTING-DIODES; ALGAN TUNNEL-JUNCTION; QUANTUM-WELLS; NM ALGAN; ALN; EBL; CONFINEMENT; DESIGN; WATER;

D O I：

10.1021/acsaelm.4c01711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As eco-friendly light sources, AlGaN-based deep ultraviolet laser diodes (AlGaN DUV LDs) employing aluminum gallium nitride that emit between 200 and 300 nm have seen various applications in replacing the traditional mercury DUV light sources, such as photolithography, fluorescence microscopy, and water purification. In this review, we present structures, applications, and advantages of the AlGaN DUV LDs. In addition, limitations and challenges of the AlGaN DUV LDs will be covered. A comparative analysis of the previous researchers' work regarding strategies that include various designs of electron blocking layers (EBLs), cladding layers, waveguides, and quantum barriers in enhancing the performance of DUV LDs will be reviewed, and the underlying physics of these designs in improving the performance of AlGaN DUV LDs will be discussed.

引用

页码：8710 / 8724

页数：15

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