Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform

被引：26
作者：
Wei, Chao [1 ]
Yu, Youren [1 ]
Wang, Ziyun [1 ]
Jiang, Lin [1 ]
Zeng, Zhongming [2 ]
Ye, Jia [1 ]
Zou, Xihua [1 ]
Pan, Wei [1 ]
Xie, Xiaojun [1 ]
Yan, Lianshan [1 ]
机构：
[1] Southwest Jiaotong Univ, Sch Informat Sci & Technol, Key Lab Photon Elect Integrat & Commun Sensing Con, Chengdu 611756, Peoples R China
[2] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China
来源：
LIGHT-ADVANCED MANUFACTURING | 2023年 / 4卷 / 03期
关键词：
Photodiodes; Thin-film lithium niobate; Integrated photonics; Ultra-wideband electro-optic modulators; SILICON-NITRIDE; HIGH-POWER; HIGH-SPEED; GENERATION;
D O I：
10.37188/lam.2023.030
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various highperformance optoelectronics devices, ranging from the ultra-wideband electro-optic modulators to the highefficient quantum sources. However, the TFLN platform does not natively promise lasers and photodiodes. This study presents an InP/InGaAs modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm wavelength. It is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale, multi-function, and high-performance TFLN photonic integrated circuits.
引用
收藏
页码：263 / 271
页数：9
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