Fluorinated poly(aryl ether)s with extremely low dielectric constant and high thermal stability by amino and epoxy cross-linking networks

Fluorinated poly(aryl ether)s possess low dielectric constants resulting from the presence of low-polarity fluorine, allowing them to be employed broadly in microelectronic devices. In the current work, fluorinated poly(aryl ether)s (Co-PAE-n) bearing the structure of perfluorobiphenyl, trifluoroisopropyl and amino groups were synthesized from 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2-bis(4-hydroxyphenyl)hexafluoropropane and perfluorobiphenyl. With the aim of further attaining enhanced overall performance, the amino groups in the fluorinated poly(aryl ether)s were reacted with the epoxy groups in 1,6-hexanediol diglycidyl ether to achieve the formation of cross-linked poly(aryl ether)s (CL-Co-PAE-n). Detailed research was conducted to investigate the impact of the polymer molecular structure and cross-linked network structure on the performances. Due to the simultaneous introduction of fluorine-containing groups and cross-linked networks in thepoly(aryl ether)s structure, the CL-Co-PAE-n films display low dielectric constants (k = 2.22-2.51 at 1 MHz) and water uptake (0.21%-0.35%) as well as outstanding thermal properties (T5% = 419-526 degrees C) and mechanical performances (tensile strength = 43.2-77.1 MPa).