Ka-Band Cascode CMOS Power Amplifier with Improved Linearity Using Bias Optimization Technique

被引:0
|
作者
Kim, Hyunsoo [1 ]
Lee, Jaeyong [1 ]
Park, Changkun [1 ]
机构
[1] Soongsil Univ, Dept Intelligent Semicond, IMS Lab, Seoul, South Korea
关键词
cascode; CMOS; linearity; millimeter-wave; power amplifier;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, we presented a bias optimization design technique to maximize the linearity of the cascode power amplifier. Optimization was performed based on distortion and IMD3 analysis through continuous wave and two-tone power simulation. The proposed optimization design technique was validated through measurements with 64-quadrature amplitude modulation (QAM) signals, which had a 100-MHz channel bandwidth. The designed differential cascode power amplifier, using a 65-nm RF CMOS process, achieved an output 1-dB compression point (OP1dB) of 17.0-dBm, a saturation output power (PSAT) of 18.5-dBm, and a peak power-added efficiency (PAE) of 32.7% at 28 GHz. Furthermore, the 64-QAM performance achieved a P-AVG of 11.7-dBm and a PAE(AVG) of 16% with -25 dB error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) of -28.7 dBc. Through the bias optimization technique, P-AVG and PAE(AVG) were improved by 1.1-dBm and 2.4%, respectively.
引用
收藏
页码:66 / 69
页数:4
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