First Principles Study of CoSb3/Ni Interface Structure and Mechanical Properties

被引:0
|
作者
Shu, Cuicui [1 ]
Zhai, Pengcheng [1 ,2 ]
Huang, Xiege [1 ]
Morozov, Sergey I. [3 ]
Li, Guodong [1 ,2 ]
Pan, Zhiyuan [4 ]
机构
[1] Wuhan Univ Technol, Hubei Key Lab Theory & Applicat Adv Mat Mech, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[3] South Ural State Univ, Dept Comp Simulat & Nanotechnol, Chelyabinsk 454080, Russia
[4] Wuhan Huaxia Inst Technol, Sch Civil Engn, Wuhan 430223, Peoples R China
来源
ACTA METALLURGICA SINICA-ENGLISH LETTERS | 2025年
基金
中国国家自然科学基金;
关键词
Thermoelectric; Intercfacial structure; Ideal tensile strength; Failure mechanism; THERMOELECTRIC GENERATORS; RELIABILITY EVALUATION; FAILURE-MECHANISM; WASTE HEAT; SKUTTERUDITES;
D O I
10.1007/s40195-025-01830-4
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Mechanical stability is critically essential in the design of thermoelectric devices. In this study, we employed first-principles calculations based on density functional theory to investigate the failure mechanisms at the CoSb3/Ni interface. Our findings reveal that the CoSb3(100)/Ni(100) and CoSb3(100)/Ni(111)_1 configurations are favorable interface structures. The ideal tensile strength of the CoSb3/Ni interface is markedly lower than that of bulk CoSb3, which can be attributed to structural rearrangements near the interface that weaken the strength of the Co-Sb bonds. Interface failure occurs in CoSb3, where covalent Sb-Sb bonds exhibit a tendency to soften prior to the ionic Co-Sb bonds due to their comparatively lower rigidity. Consequently, the breakage of the Co-Sb bonds leads to interface failure. Structural failure at both single-layer Sb_CoSb3(100)/Ni(100) and single-layer Sb_CoSb3(100)/Ni(111)_1 interfaces results from ruptures in intermediate Co-Sb bonds in CoSb3, whereas failures at double-layer Sb_CoSb3(100)/Ni(100) and double-layer Sb_CoSb3(100)/Ni(111)_1 interfaces stem from fractures in the uppermost Co-Sb bonds. This behavior is primarily driven by atomic rearrangements near the single-layer Sb_CoSb3 interface, which promote bond formation between Sb-Ni and Co-Ni, thereby enhancing stability within the superstructure of CoSb3. This study will provide a theoretical basis for the interface design of thermoelectric devices.
引用
收藏
页码:793 / 802
页数:10
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