Conductivity Measurement Technique for Interface and Surface Using Dielectric Rod Resonator Based on Calibration

被引:0
作者
Zeng, Cheng [1 ]
Xiong, Yisong [1 ]
Zhang, Xiaoyu [1 ]
Luo, Li [1 ]
Ning, Junsong [1 ]
Bu, Shirong [1 ]
Wang, Zhanping [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
Dielectrics; Dielectric measurement; Conductivity; Conductivity measurement; Slabs; Metals; Conductors; Calibration; Standards; Resonant frequency; copper clad substrate; interface conductivity; multimode; sapphire rod resonator; surface conductivity; ROUND-ROBIN TEST; COMPLEX PERMITTIVITY;
D O I
10.1109/TMTT.2024.3470768
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A measurement method for the conductivity of circuit substrate was proposed based on the calibration of dielectric resonator. This method can efficiently measure the conductor deposition interface conductivity (sigma(i)) and surface conductivity (sigma(s)) of a single sample without prior knowledge of its dielectric constant. After calibration, the influence of the sample's dielectric slab to the interface conductivity measurement is effectively eliminated. This method allows for efficient conductivity measurement of the interface or surface of a single sample at single frequency or multiple frequencies, in one assembly process. A measurement device was fabricated based on this method. Interface and surface conductivity of four different copper-clad substrates, including Rogers RT/duroid5880 and Rogers RO4350B substrates, were measured. The interface and surface conductivity of four samples were measured using another proposed method, and the maximum deviation between the measured results and the results presented in this article did not exceed 5%. By using resonator multimode measurement, we evaluated the performance of the sample interface conductivity at different frequencies during 11.5-26.5 GHz. This technique holds the potential in facilitating the development and practical application of new materials.
引用
收藏
页码:2345 / 2355
页数:11
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