A 600-V Peak-to-Peak 65-dBc RF Signal Source for Trapped-Ion Quantum Computing

被引:0
作者
Bae, Seongchan [1 ]
Kim, Myunghun [1 ]
Cho, Junhee [1 ]
Lee, Moonjoo [1 ]
Sim, Jae-Yoon [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Pohang 37673, South Korea
关键词
Radio frequency; Transformers; Ions; Resonant frequency; Logic gates; Harmonic analysis; Impedance; Voltage; RF signals; Power demand; BCD; high-voltage; ion trap; quantum computing; RF source; trapped-ion quantum computing;
D O I
10.1109/TCSII.2024.3502802
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a high-voltage RF source for trapped-ion quantum computing. It consists of an external transformer and a driver implemented on a single chip. The use of a transformer significantly reduces on-chip current driving requirements to 32mA while delivering a 620-VPP to the output. The proposed architecture also achieves a 20dB improvement in SFDR compared to the previous work. This brief includes a guide for the optimal transformer design that can maximize the output voltage with the minimum power consumption. The proposed design scheme provides a miniaturized implementation of the RF source and makes it promising for scalable quantum computing with multiple RF sources.
引用
收藏
页码:103 / 107
页数:5
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