Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly

被引:0
|
作者
Zheng, Yueting [1 ]
Luo, Chengyu [1 ]
Hu, Hailong [1 ]
Guo, Tailiang [1 ,2 ]
Li, Fushan [1 ,2 ]
机构
[1] Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2025年 / 16卷 / 12期
关键词
FORSTER RADIUS; EFFICIENT; LANGMUIR; FILMS;
D O I
10.1021/acs.jpclett.5c00094
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Positive aging in quantum dot light-emitting diodes (QLEDs) is a common phenomenon, and its unpredictability is a serious problem for large size or high-resolution devices. In this work, the compact assembly of quantum dots (QDs) was realized by using Langmuir-Blodgett (LB) technology, and we propose a novel interactive mechanism for the positive aging of QLEDs based on the self-assembled QD film. We suggest that there is a quasi-monolayer phase between strictly solid phase and collapse during the LB process. The QD assembly states vary the external quantum efficiency (EQE) climbing process and the electroluminescent (EL) peak distribution during operation, as well as the aging rearrangement of QDs in the device. The tight alignment of QDs has low entropy and contributes to enhancing device stability. Our study contributes to the understanding of the origin of positive aging of QLEDs and holds potential for the practical application of QLEDs in displays.
引用
收藏
页码:2987 / 2995
页数:9
相关论文
共 50 条
  • [21] Ultrahigh-efficiency quantum dot light-emitting diodes
    Duan, Lian
    LIGHT-SCIENCE & APPLICATIONS, 2024, 13 (01)
  • [22] Charge Accumulation Behavior in Quantum Dot Light-Emitting Diodes
    Wang, Cheng
    Zhang, Chi
    Li, Ruifeng
    Chen, Qi
    Qian, Lei
    Chen, Liwei
    ACTA PHYSICO-CHIMICA SINICA, 2022, 38 (08)
  • [23] Revisiting Hole Injection in Quantum Dot Light-Emitting Diodes
    Lei, Shiyun
    Xiao, Yuanyuan
    Yu, Kanglin
    Xiao, Biao
    Wan, Ming
    Zou, Liyong
    You, Qingliang
    Yang, Renqiang
    ADVANCED FUNCTIONAL MATERIALS, 2023, 33 (48)
  • [24] Quantum-Dot-Electrolyte Light-Emitting Diodes for Displays
    Ren, Yunfei
    Liang, Xiaoci
    Lu, Xiuyuan
    Liu, Baiquan
    Zhang, Li
    Zhang, Lingjiao
    Huang, Yi
    Zheng, Huajian
    Jin, Yizheng
    Liu, Chuan
    ADVANCED MATERIALS, 2025,
  • [25] Improved performance light-emitting diodes quantum dot layer
    Niu, Yu-Hua
    Munro, Andrea M.
    Cheng, Yen-Ju
    Tian, Yanqing
    Liu, Michelle S.
    Zhao, Jialong
    Bardecker, Julie A.
    Jen-La Plante, Ilan
    Ginger, David S.
    Jen, Alex K. -Y.
    ADVANCED MATERIALS, 2007, 19 (20) : 3371 - +
  • [26] Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes
    Zinan Chen
    Qiang Su
    Zhiyuan Qin
    Shuming Chen
    Nano Research, 2021, 14 : 320 - 327
  • [27] InGaAs/GaP quantum dot light-emitting diodes on Si
    Song, Yuncheng
    Lee, Minjoo Larry
    APPLIED PHYSICS LETTERS, 2013, 103 (14)
  • [28] Organometal Halide Perovskite Quantum Dot Light-Emitting Diodes
    Deng, Wei
    Xu, Xiuzhen
    Zhang, Xiujuan
    Zhang, Yedong
    Jin, Xiangcheng
    Wang, Liang
    Lee, Shuit-Tong
    Jie, Jiansheng
    ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (26) : 4797 - 4802
  • [29] Recent progresses on InGaN quantum dot light-emitting diodes
    Wang L.
    Lv W.
    Hao Z.
    Luo Y.
    Frontiers of Optoelectronics, 2014, 7 (3) : 293 - 299
  • [30] Upconversion electroluminescence in InAs quantum dot light-emitting diodes
    Baumgartner, A.
    Chaggar, A.
    Patane, A.
    Eaves, L.
    Henini, M.
    APPLIED PHYSICS LETTERS, 2008, 92 (09)