Evaluation the influence of different chemical bond on microwave dielectric properties of YbMgGaO4 ceramics with low dielectric constant

Through the application of solid-state reaction method methodology, YbMgGaO4 ceramics, subjected to calcination at 1300 degrees C followed by sintering at 1400 degrees C, exhibited the optimal dielectric properties: epsilon r= 11.87, Q x f = 26273 GHz, tau f =-21.04 ppm/degrees C at 10.84 GHz. The crystalline structure of these ceramics was confirmed to be triangular through Rietveld refinement and Raman spectroscopic analysis. Given the high density exhibited by YbMgGaO4 ceramics, this study delves into the intrinsic influence mechanism of chemical bond properties and lattice stability on microwave dielectric properties. Research has revealed that the strong ionization properties of Yb-O bonds and the significant polarization ability of Yb ions are key factors determining the epsilon r. Meanwhile, analysis of lattice energy and Raman vibration modes indicates that the regulation of Q x f values should focus on the elements Mg and Ga at position 6c. This study not only deepens our understanding of the interactions between composition, crystal structure, and properties, but also provides direction for subsequent optimization research.