The Impact of Radiation-Induced FeGa- VN Defects on the Electrical Performance of AlGaN/GaN HEMTs

被引：0
作者：
Jiang, Hao [1 ]
Xu, Xiaodong [1 ]
Yu, Xueqiang [1 ]
Cao, Xiangjie [1 ]
Ying, Tao [2 ]
Yang, Jianqun [1 ]
Zhang, Peijian [3 ]
Li, Xingji [1 ]
机构：
[1] Harbin Inst Technol, Technol Innovat Ctr Mat & Devices Extreme Environm, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Harbin Inst Technol, Technol Innovat Ctr Mat & Devices Extreme Environm, Sch Phys, Harbin 150001, Peoples R China
[3] Natl Key Lab Integrated Circuits & Microsyst, Chongqing 400060, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2025年 / 72卷 / 02期
关键词：
Radiation effects; HEMTs; MODFETs; Wide band gap semiconductors; Aluminum gallium nitride; Logic gates; Chlorine; Electrons; Performance evaluation; Iron; Complex defects; current deep-level transient spectroscopy (I-DLTS); displacement damage; GaN high-electron-mobility transistors (HEMTs); heavy-ion irradiation; DISPLACEMENT DAMAGE; DEGRADATION; DEFECTS;
D O I：
10.1109/TNS.2025.3529188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, a combined approach of experimentation and simulation is adopted to study the effects of radiation-induced defects on the electrical properties of GaN high-electron-mobility transistors (HEMTs) under 6-MeV chlorine ion irradiation. Through electrical performance and current deep-level transient spectroscopy (I-DLTS) testing, the evolution of defect from V-N - V-N (+1/+2) and Fe-Ga to Fe-Ga- V(N )is observed with increasing irradiation fluence. When the fluence exceeds 5x10(10) ions/cm(2), the concentration of Fe-Ga- V(N )defects reaches saturation due to the limitation of the Fe-Ga concentration, which is reflected in the changes to the peak G(M) . The FeGa- VN defect is confirmed as a primary factor contributing to electrical degradation in the 2-D electron gas (2DEG) conductivity of the GaN-HEMTs.
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页码：118 / 124
页数：7
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