Probing Plasmon Resonances in AlGaN/GaN Heterostructures with 300 K black-body radiation

被引:0
|
作者
Dub, Maksym [1 ,2 ]
Sai, Pavlo [1 ,2 ]
Buts, Dmytro [2 ]
Rumyantsev, Sergey [2 ]
Knap, Wojciech [1 ,2 ]
机构
[1] Warsaw Univ Technol, CENTERA, CEZAMAT, Warsaw, Poland
[2] Inst High Pressure Phys PAS, Warsaw, Poland
关键词
plasmon resonance; AlGaN/GaN; grating gate plasmonic crystal;
D O I
10.23919/EuMC61614.2024.10732262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Our study reveals the efficient modulation of room-temperature thermal radiation by terahertz plasmons in AlGaN/GaN grating-gate structures. We demonstrate close alignment between resulting spectra and plasmon absorption measurements using high-power external sources. Despite weak reflected radiation intensity for typical plasmonic samples, precise measurements require gate voltage plasmon modulation and lock-in detection techniques, with caution against artifacts. Modulation of drain voltage also influences reflected thermal radiation by plasmons. These findings are crucial for advancing research on resonant plasmon-based terahertz sources, navigating the interplay between electrically excited terahertz emission and reflected background radiation.
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页码:1062 / 1065
页数:4
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