Inverse Design of Multi-Port Power Splitter with Arbitrary Ratio Based on Shape Optimization

被引：0

作者：

Liu, Yang ^{[1
]}

Kang, Zhe ^{[2
]}

Xu, Haoda ^{[3
]}

Zhong, Guangbiao ^{[3
]}

Zhang, Ruitao ^{[3
]}

Fu, Chaoying ^{[4
]}

Tian, Ye ^{[2
,3
]}

机构：

[1] Jilin Business & Technol Coll, Dept Basic Courses Teaching, Changchun 130507, Peoples R China

[2] Nanjing Univ Aeronaut & Astronaut, Coll Elect & Informat Engn, Natl Key Lab Microwave Photon, Nanjing 210016, Peoples R China

[3] Ningbo Univ, Dept Elect Engn & Comp Sci, Ningbo 315211, Peoples R China

[4] Huzhou Univ, Sch Life Sci, Huzhou Key Lab Med & Environm Applicat Technol, Huzhou 313000, Peoples R China

来源：

NANOMATERIALS | 2025年 / 15卷 / 05期

基金：

中国国家自然科学基金;

关键词：

inverse design; silicon photonics; power splitter; ON-CHIP;

D O I：

10.3390/nano15050393

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Arbitrary ratio power splitters (APSs) play a crucial role in enhancing the flexibility of photonic integrated circuits (PICs) on the silicon-on-insulator (SOI) platform. However, most existing APSs are designed with two output channels, limiting their functionality. In this study, we present a shape optimization method to develop a multiport arbitrary ratio power splitter (MAPS) that enables arbitrary power distribution across three output channels within a compact footprint of 6 mu m x 2.7 mu m. To validate this approach, two MAPS designs were demonstrated with power ratios of 1:2:1 and 1:2:4. Across a bandwidth range from 1500 nm to 1600 nm, these designs matched the desired power distribution with excess losses (ELs) below 0.5 dB. Experimental results further confirmed the effectiveness of the splitters, with ELs below 1.3 dB over a bandwidth of 1500-1565 nm.

引用

页数：11

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