Moiré Ferroelectricity in Twisted Multilayer SnSe2

Moir & eacute; structures have gained attention for their ability to regulate material properties and drive phenomena such as superconductivity, topological effects, and the quantum Hall effect. This tunability also extends to Moir & eacute; ferroelectricity, which is essential for high-performance, multistate electronic devices. However, most studies focus on few-layer twisted materials from mechanical exfoliation. Although chemical vapor deposition (CVD) theoretically enables the direct growth of twisted multilayer materials with sliding Moir & eacute; ferroelectricity, this has yet to be achieved. The characteristics of van der Waals-layered SnSe2, such as multiphase and broad bandgap, make it well suited for the direct growth of multilayer structures. Herein, multilayer Moir & eacute;-twisted SnSe2 is synthesized using a non-steady-state CVD method. Layered and screw twists lead to Moir & eacute; structures, inducing ferroelectricity. Increasing the number of twists and layers enhances ferroelectric properties and signal feedback. These devices exhibit clear hysteresis and multistate ferroelectric performance under varying voltage drives.